Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Stefan Kirnstoetter"'
Autor:
Kevin Nay Yaung, Allen Barnett, Anthony Lochtefeld, Stefan Kirnstoetter, Joseph Faucher, Minjoo Larry Lee, Andy Gerger
Publikováno v:
Journal of Crystal Growth. 453:65-70
Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fadafdb153ddfdd07f8d6f369c61b40
https://doi.org/10.1016/j.jcrysgro.2016.08.015
https://doi.org/10.1016/j.jcrysgro.2016.08.015
Autor:
Peter Hadley, Thomas Aichinger, Gernot Gruber, Holger Schulze, Markus Koch, Stefan Kirnstoetter, Werner Schustereder
Publikováno v:
physica status solidi c. 11:1593-1596
The present study focuses on electrically detected magnetic resonance (EDMR) investigations of proton implanted silicon. The samples were prepared on n-type silicon wafers highly doped diffused boron (B) p-region, forming a pn-junction. A large addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b1777f835dc05aaa0ec281c576da86c
https://doi.org/10.1002/pssc.201400053
https://doi.org/10.1002/pssc.201400053
Autor:
Stefan Kirnstoetter, Martin Faccinelli, Peter Hadley, Johannes Georg Laven, Moriz Jelinek, Hans-Joachim Schulze, Werner Schustereder
Publikováno v:
physica status solidi c. 11:1707-1710
Electron Beam Induced Current (EBIC) measurements were used to produce cross sectional images of superjunction power transistors. These images show how the depletion width expands under reverse bias. Superjunctions are alternating p- and n-type doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0219b51d975a7b2ba4493e5928a1bbdc
https://doi.org/10.1002/pssc.201400050
https://doi.org/10.1002/pssc.201400050
Autor:
Christian Gspan, Stefan Kirnstoetter, Johannes Georg Laven, Werner Grogger, Werner Schustereder, Peter Hadley, Moriz Jelinek, Hans-Joachim Schulze, Martin Faccinelli
Publikováno v:
physica status solidi c. 11:1545-1550
Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2553c5925204b9cbc1ff2e1ae16d7273
https://doi.org/10.1002/pssc.201400051
https://doi.org/10.1002/pssc.201400051
Autor:
Werner Schustereder, Martin Faccinelli, Stefan Kirnstoetter, Johannes Georg Laven, Peter Hadley
Publikováno v:
physica status solidi c. 11:1583-1588
The concentration of defects in silicon can be changed by ion implantations and thermal annealing steps. Some of the defects incorporated during these processes form complexes which can act as donors or acceptors and their concentration can even over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a7db125727256bbefc27997079e80c
https://doi.org/10.1002/pssc.201400045
https://doi.org/10.1002/pssc.201400045
Autor:
Stefan Kirnstoetter, Martin Faccinelli, Peter Hadley, Johannes Laven, Hans-Joachim Schulze, Reinhart Job, Werner Schustereder
Publikováno v:
ECS Meeting Abstracts. :2647-2647
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5753d1ff54a10a484a1f2838e6b1bf33
https://doi.org/10.1149/ma2012-02/32/2647
https://doi.org/10.1149/ma2012-02/32/2647