Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Stefan Kirnstötter"'
Autor:
Stefan Kirnstötter, Florian Gerstner, Nikolaus P. Papenberg, Johannes A. Österreicher, Carina M. Schlögl, Belinda Gruber, Florian Grabner
Publikováno v:
Advanced Engineering Materials. 21:1900089
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f887b55a2d610fa8e92af6ec912b7a40
https://doi.org/10.1002/adem.201900089
https://doi.org/10.1002/adem.201900089
Autor:
H.-J. Schulze, Martin Faccinelli, Peter Hadley, Stefan Kirnstötter, Johannes Georg Laven, Moriz Jelinek, Werner Schustereder
Publikováno v:
Solid State Phenomena. :311-316
Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8988b82d555875dece894c6a215599f2
https://doi.org/10.4028/www.scientific.net/ssp.205-206.311
https://doi.org/10.4028/www.scientific.net/ssp.205-206.311
Autor:
Reinhart Job, Hans-Joachim Schulze, Werner Schustereder, Stefan Kirnstötter, Johannes Georg Laven, Martin Faccinelli, Peter Hadley
Publikováno v:
ECS Transactions. 50:115-120
Electron beam induced current (EBIC) measurements were used to determine the doping type and to extract the diffusion length in proton implanted silicon wafers. This method makes it possible to distinguish between n-type and p-type at low carrier con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c1a738f1b17da637ae91b575ea6ffb
https://doi.org/10.1149/05005.0115ecst
https://doi.org/10.1149/05005.0115ecst
Autor:
Werner Schustereder, Stefan Kirnstötter, Johannes Georg Laven, Martin Faccinelli, H.-J. Schulze, Reinhart Job, Peter Hadley
Publikováno v:
ECS Transactions. 49:475-481
Electron beam induced current (EBIC) measurements were used to produce cross sectional images of superjunctions in CoolMOS™ power transistors. The positions of the pn-junctions were determined by EBIC measurements. Knowing the exact locations of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebdac0b3acd1e414ef398f931b6bdc5
https://doi.org/10.1149/04901.0475ecst
https://doi.org/10.1149/04901.0475ecst
Autor:
Stefan Kirnstötter, Martin Faccinelli, Johannes Georg Laven, Peter Hadley, Hans-Joachim Schulze, Werner Schustereder
Publikováno v:
AIP Conference Proceedings.
The defect complexes that are formed when protons with energies in the MeV-range were implanted into high-purity silicon were investigated. After implantation, the samples were annealed at 400 °C or 450 °C for times ranging between 15 minutes and 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75b5a6e89799a128406d499984efa07f
https://doi.org/10.1063/1.4865603
https://doi.org/10.1063/1.4865603