Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Stefan Janz"'
Autor:
Lea Schmidtner, Hannes Heinrich, Marcel Fuchs, Anke Pötzsch, Stefan Janz, Mathias Herrmann, Christos Aneziris, Thomas Kaden
Publikováno v:
Journal of Manufacturing and Materials Processing, Vol 4, Iss 1, p 2 (2020)
Multi-wire sawing has emerged as the leading technology in wafer production for a variety of semiconductor materials. This study investigates the process stability and efficiency of conventional semiconductor multi-wire slurry saws in routinely machi
Externí odkaz:
https://doaj.org/article/9937ed55829243b3a9a2434a4a86dcd3
Autor:
Ulrike Heitmann, Johan Westraadt, Jacques O’Connell, Leonie Jakob, Frank Dimroth, Jonas Bartsch, Stefan Janz, Jan Neethling
Publikováno v:
ACS Applied Materials & Interfaces. 14:41149-41155
Sprayed transparent conductive oxides (TCOs) are an interesting alternative to sputtered TCOs for many applications due to the possible high throughput and a simple, atmospheric pressure process of spray deposition. In this work, the growth mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8f03ab8c76672ffe9c6e29cebfd4df6
https://doi.org/10.1021/acsami.2c07585
https://doi.org/10.1021/acsami.2c07585
Publikováno v:
IEEE Journal of Photovoltaics. 11:1256-1263
This article describes the successful integration of a passivated, highly reflecting Ge rear side into a III-V multijunction solar cell. The use of lowly doped Ge and the new rear side leads to the aimed increase in Ge cell current up to 1.6 mA.cm (e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b25150ee9746d27ac46dde62f1b5ccd9
https://doi.org/10.1109/jphotov.2021.3087727
https://doi.org/10.1109/jphotov.2021.3087727
Autor:
Clara Rittmann, Florian Schindler, Armin Richter, Tim Niewelt, Hannah Stolzenburg, Bernd Steinhauser, Jonas Dalke, Marion Drießen, Charlotte Weiss, Stefan Janz, Martin C. Schubert
Publikováno v:
Solar RRL. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba50a77c957d1a72a256ef734e260b2
https://doi.org/10.1002/solr.202200698
https://doi.org/10.1002/solr.202200698
Autor:
Marion Driesen, Armin Richter, Jana-Isabelle Polzin, Frank Feldmann, Bernd Steinhauser, Markus Ohnemus, Charlotte Weiss, Jan Benick, Stefan Janz
n-type silicon-based tunnel-oxide passivating contact (TOPCon) solar cells are a cell concept reaching highest power conversion efficiencies. In this article, we demonstrate a substantial simplification of processing such TOPCon solar cells by reduci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b4dbe881bef1884547b50d6dbf6b2f0
Publikováno v:
SSRN Electronic Journal.
The effect of the passivation to etching duration ratio on the bipolar electrochemical etching of highly p-doped germanium on its pore structures has been investigated. The final goal is the development of porous multi-layer stacks consisting of a cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::734670c003d1b858bd5985f2f6e9c503
https://doi.org/10.2139/ssrn.4214548
https://doi.org/10.2139/ssrn.4214548
Autor:
Sven Kluska, Stefan Janz, Jana Wulf, Ulrike Heitmann, Nima Huschmand, Frank Dimroth, Jonas Bartsch, David Lackner
On the route to a high efficiency glued tandem solar cell fabricated using a ZnO-based transparent conductive adhesive, several challenges were encountered. By lowering the pressure during the annealing of the adhesive to 0.3 or 1 kg/cm2, the III-V s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78bdd2993bb6a95ca5d2e56f9e4b0382
Autor:
Hubert Hauser, Oliver Höhn, David Lackner, Ulrike Heitmann, Jonas Bartsch, Stefan Janz, Felix Predan, Richard Hermann, Frank Dimroth, Sven Kluska
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
By adjusting the process flow of a newly developed transparent conductive adhesive (TCA), the first mechanically stable interconnection of a glued III-V on Si tandem solar cell was established utilizing a ZnO-based adhesive. The measured $V_{OC}$ of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4db2fa36038790637b91fb87f4316590
https://doi.org/10.1109/pvsc45281.2020.9300646
https://doi.org/10.1109/pvsc45281.2020.9300646
Autor:
Stefan Janz, Rufi Kurstjens, Tim Niewelt, Bruno Boizot, Charlotte Weiss, Jérémie Lefèvre, Seonyong Park, Christian Mohr, Sandrine Picard, Olivier Cavani
Publikováno v:
Solar Energy Mater.Solar Cells
Solar Energy Mater.Solar Cells, 2020, 209, pp.110430. ⟨10.1016/j.solmat.2020.110430⟩
Solar Energy Mater.Solar Cells, 2020, 209, pp.110430. ⟨10.1016/j.solmat.2020.110430⟩
International audience; We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (tau(eff)) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28fdce1a1b0507308b989732ccf62e31
https://hal.archives-ouvertes.fr/hal-02628107
https://hal.archives-ouvertes.fr/hal-02628107
Autor:
David Lackner, Jens Ohlmann, Andreas Beyer, Stefan Janz, Thomas Rachow, Jürgen Belz, Frank Dimroth, Jan Benick, Kerstin Volz, Martin Hermle, Markus Feifel
Publikováno v:
IEEE Journal of Photovoltaics. 7:502-507
Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f487bc6678f49e27667267ebc23f5d6
https://doi.org/10.1109/jphotov.2016.2642645
https://doi.org/10.1109/jphotov.2016.2642645