Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Stefan Jakschik"'
Publikováno v:
Laser Technik Journal. 13:42-45
The manufacturing industry is characterised by a multitude of processes. From joining and separation technologies by means of laser, soldering and gluing, surface processing such as drilling, sintering and milling, and the utilisation of fluxes or pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a6892666c8572ffecdb3134734b306
https://doi.org/10.1002/latj.201600004
https://doi.org/10.1002/latj.201600004
Autor:
Thomas Mikolajick, H. Mähne, David Rafaja, Stefan Slesazeck, Stefan Jakschik, Volker Klemm, L. Berger, Dominik Martin
Publikováno v:
Solid-State Electronics. 72:73-77
In this paper, the correlation between the crystallinity of reactively sputtered Nb 2 O 5 layers on Pt bottom electrode and their resistive switching behavior was investigated. It was found that the amorphous phase can transformed to an orthorhombic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7641d0bf7095071a8260cc3d5db25fc3
https://doi.org/10.1016/j.sse.2012.01.005
https://doi.org/10.1016/j.sse.2012.01.005
Publikováno v:
Microelectronic Engineering. 88:1148-1151
The resistive switching characteristics of Pt/TiO"2/Al devices were investigated. Amorphous and rutile TiO"2 samples were prepared and electrically characterized. The amorphous sample was sputtered at room temperature. The rutile phase of the TiO"2 w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e72af3e5f99cc160d0323821b77abd
https://doi.org/10.1016/j.mee.2011.03.030
https://doi.org/10.1016/j.mee.2011.03.030
Autor:
Volker Türschmann, Stefan Jakschik
Publikováno v:
Laser Technik Journal. 11:19-21
The ultrashort-pulse laser provides a precision and quality that have been previously unknown. This is a fact. And because of new applications, this relatively young technology is becoming more and more established in industry. What has been mostly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69606bb59d4ce70d541b2e2248530fb
https://doi.org/10.1002/latj.201400049
https://doi.org/10.1002/latj.201400049
Autor:
Marc Florian Beug, Gerald Dallmann, Roman Knoefler, Dirk Manger, Uwe Schroeder, Stephan Kudelka, Stefan Jakschik, Armin Tilke, Nicolas Nagel, Ulrike Bewersdorff, Karl Heinz Kuesters, Wolfgang Mueller, Christoph Ludwig
Publikováno v:
Advanced Engineering Materials. 11:241-248
New materials are of key importance for scaling memories in the sub 50 nm generations. Currently high-k materials and metal gates are investigated for usage in Flash and DRAM memory. However, the requirements in the applications are different, leadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f264939381aa76432af345a9d323fcc
https://doi.org/10.1002/adem.200800298
https://doi.org/10.1002/adem.200800298
Autor:
Sofie Mertens, Chao Zhao, Eveline Verleysen, Hugo Bender, Wilfried Vandervorst, Philippe Absil, Christa Vrancken, Stefan Jakschik, Thomas Hoffmann, Anne Lauwers, Olivier Richard
Publikováno v:
ECS Transactions. 13:397-404
The thermal stability of Ni(Pt)-silicides by carbon implantation was evaluated. The Ni(Pt)-silicide morphology and phase formation were studied by means of sheet resistance (Rs) measurements, scanning electron microscopy (SEM) and transmission electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3dfe588afa45bf2c9fdd0aa99a24af
https://doi.org/10.1149/1.2911522
https://doi.org/10.1149/1.2911522
Autor:
Stefan Jakschik, R. Degraeve, R. Duschl, Martin Kerber, Y.N. Hwang, Stephan Kudelka, T. Kauerauf, A. Avellan
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:310-314
HfSiOx with TiN gate is investigated under substrate injection with respect to stress-induced leakage current (SILC). Most damage caused by electrical stress was found in the high- layer and not in the interface to silicon. Dependent on the applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2adfe689e6f2aaa406427584837d881
https://doi.org/10.1109/tdmr.2007.902201
https://doi.org/10.1109/tdmr.2007.902201
Publikováno v:
Microelectronics Reliability. 47:497-500
Dielectric breakdown and trapping effects are of serious concern for high-k dielectrics. In this paper acceleration models for dielectric breakdown and leakage current degradation in HfSiO films thicker 10 nm are introduced and the mechanism for leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed8de641834002dc505148c598348bb4
https://doi.org/10.1016/j.microrel.2007.01.017
https://doi.org/10.1016/j.microrel.2007.01.017
Autor:
Chris Drijbooms, Denis Shamiryan, Peter Verheyen, Hans Weijtmans, Philip Absil, Chantal J. Arena, R. Wise, Sophie Passefort, Akira Inoue, Matty Caymax, John McCormack, Haruyuki Sorada, Alain Moussa, Roger Loo, Geert Eneman, Vladimir Machkaoutsan, Pierre Tomasini, Stephane Godny, Rita Rooyackers, Stefan Jakschik, Frederik Leys, Christian Walczyk, Byeong Chan Lee, Sangjin Hyun, Tinne Delande, Hugo Bender, Luc Geenen
Publikováno v:
ECS Transactions. 3:453-465
Selective Epitaxial Growth of SiGe and/or Si-cap/SiGe heterostructures offer an elegant way to improve pMOS device performance. This paper discusses some important challenges and characteristics of the corresponding epi process. Loading effects are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5865cae7713a5efb7770e4b2dda609
https://doi.org/10.1149/1.2355843
https://doi.org/10.1149/1.2355843
Autor:
Stefan Jakschik, Alejandro Avellan, Elke Erben, Angela Link, Stephan Kudelka, Martin Kerber, Alfred Kersch, Uwe Schroeder
Publikováno v:
ECS Transactions. 1:125-132
Key ALD technologies required for the scaling of DRAM trench capacitors below 50nm are demonstrated. The main focus in this article is on the introduction of HfSiO as a dielectric material for deep trench capacitors in combination with the developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01c8707c306b1c4efb9479f22555fb9
https://doi.org/10.1149/1.2209261
https://doi.org/10.1149/1.2209261