Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Stefan Illhardt"'
Autor:
Constantin Csato, Stefan Illhardt, Shavkat Akhmadaliev, Michael Dr. Rüb, Anastasia Guseva, Jurgen Bischoff, Andre Zowalla
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Precise vertical doping profiles in the micrometer range are key components for drift layer formation of SiC-based high voltage power devices. In order to simplify multiple high-energy implantation sequences for creating high precision deep vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe4c16d04170d2b1d24de921f89a401
https://doi.org/10.1109/iit.2018.8807914
https://doi.org/10.1109/iit.2018.8807914
Autor:
György Radnóczi, Alexander Schleusener, Vladimir Sivakov, Florian Talkenberg, Béla Pécz, Stefan Illhardt, G. Schmidl, G.K. Mussabek, Kadyrjan Dikhanbayev, Alexander S. Gudovskikh
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:041101
Semiconductor–insulator–semiconductor heterojunction solar cells were prepared using atomic layer deposition (ALD) technique. The silicon surface was treated with oxygen and hydrogen plasma in different orders before dielectric layer deposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfe1117ec518dcc875e4f2de7460c75d
https://doi.org/10.1116/1.4921726
https://doi.org/10.1116/1.4921726