Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Stefan Ilić"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-14 (2023)
Abstract Although often regarded a childhood toy, the design of paper airplanes is subtly complex. The design space and mapping from geometry to distance flown is highly nonlinear and probabilistic where a single airplane design exhibits a multitude
Externí odkaz:
https://doaj.org/article/3b380b84b0234752b3ceb84470bfbf42
Autor:
Stefan Ilić
Publikováno v:
Časopis Ksio, Vol 6, Pp 60-86 (2023)
This paper deals with the biography of the national hero Marko Kulić, an important person in the history and culture of Pančevo, not only of this city. Marko Kulić was only 27 years old when he died, but that is not an indication of the content of
Externí odkaz:
https://doaj.org/article/9e5f95bcb0a948e6b616f08607a64182
Autor:
Alberto Hijano, Stefan Ilić, Mikel Rouco, Carmen González-Orellana, Maxim Ilyn, Celia Rogero, P. Virtanen, T. T. Heikkilä, S. Khorshidian, M. Spies, N. Ligato, F. Giazotto, E. Strambini, F. Sebastián Bergeret
Publikováno v:
Physical Review Research, Vol 3, Iss 2, p 023131 (2021)
Ferromagnetic insulators (FI) can induce a strong exchange field in an adjacent superconductor (S) via the magnetic proximity effect. This manifests as spin splitting of the BCS density of states of the superconductor, an important ingredient for num
Externí odkaz:
https://doaj.org/article/9c7c0e9abf0b47008c1782bc0202dcab
Autor:
F. Sebastian, Stefan Ilić
Publikováno v:
Reference Module in Materials Science and Materials Engineering ISBN: 9780128035818
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6169027a2afb00db8d0d907f05eeb61
https://doi.org/10.1016/b978-0-323-90800-9.00130-x
https://doi.org/10.1016/b978-0-323-90800-9.00130-x
Publikováno v:
Sensors, Vol 20, Iss 11, p 3329 (2020)
This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate
Externí odkaz:
https://doaj.org/article/93dfd374cde54fc4bcef9d95a8cb3f54
Autor:
Yasen Hou, Fabrizio Nichele, Hang Chi, Alessandro Lodesani, Yingying Wu, Markus Ritter, Daniel Haxell, Margarita Davydova, Stefan Ilić, Sebastian Bergeret, Akashdeep Kamra, Liang Fu, Patrick Lee, Jagadeesh Moodera
A superconductor exhibiting a polarity-dependent critical current is of fundamental as well as technological interest, because the superconducting (SC) layer can then admit a perfect dissipationless transmission along one direction while offering a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fde119d7622913ba35ef5ecccacc8505
https://doi.org/10.21203/rs.3.rs-1620232/v1
https://doi.org/10.21203/rs.3.rs-1620232/v1
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This paper analyzes the properties of commercial silicon PIN photodiodes BPW34 as direct $\gamma$ -radiation sensors. Sample is formed by four photodiodes connected in parallel and polarized reversely. Current to voltage conversion and amplification
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c87e1e57c7a85e5ff4eea5f43acf738
https://doi.org/10.1109/miel52794.2021.9569069
https://doi.org/10.1109/miel52794.2021.9569069
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Josephson junctions (JJs), where both time-reversal and inversion symmetry are broken, exhibit a phase shift φ0 in their current-phase relation. This allows for an anomalous supercurrent to flow in the junction even in the absence of a phase bias be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c0b2592ca351bac9dd78f0fd1b6646c
http://hdl.handle.net/10261/263892
http://hdl.handle.net/10261/263892
Autor:
A. S. Jevtic, Marko Andjelkovic, Srboljub Stanković, Alberto J. Palma, S. Dimitrijevic, Stefan Ilić, Sandra Veljković, Goran S. Ristić
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL)
The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e55d502f6f3fa1b23648b8a71a03503
https://vinar.vin.bg.ac.rs/handle/123456789/10021
https://vinar.vin.bg.ac.rs/handle/123456789/10021
Autor:
Milos Krstic, Russell Duane, Stefan Ilić, Antonio M. Lallena, Goran S. Ristić, Srboljub Stanković, Aleksandar B. Jakšić, Marko Andjelkovic, Alberto J. Palma
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
instname
This work was supported in part by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science and Technological Development of the Republic of Serbia, under the project
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c54ad8b77817ff3eb63e17b900ed8f77
http://hdl.handle.net/10481/70847
http://hdl.handle.net/10481/70847