Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Stefan Hendel"'
Autor:
Sergey Peredkov, Nilson Pereira, Daniel Grötzsch, Stefan Hendel, Dirk Wallacher, Serena DeBeer
Publikováno v:
Journal of Synchrotron Radiation, Vol 31, Iss 3, Pp 622-634 (2024)
A high-flux beamline optimized for non-resonant X-ray emission spectroscopy (XES) in the tender X-ray energy range has been constructed at the BESSY II synchrotron source. The beamline utilizes a cryogenically cooled undulator that provides X-rays ov
Externí odkaz:
https://doaj.org/article/33fab8b6ac5946f9a89010c5d517a849
Autor:
Klaus Lips, Michael Hävecker, Franz Schäfers, Johannes Bahrdt, Stefan Hendel, Michael Scheer, G. Reichardt
The Energy Materials In-Situ Laboratory Berlin (EMIL) at BESSY-II is currently under construction. Two canted undulators for soft- and hard X-rays will be installed into the BESSY II storage ring in one straight section, complex beamlines with more t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65a5ccb846f66dcd2d62938053e8ab5d
https://doi.org/10.1063/1.4952861
https://doi.org/10.1063/1.4952861
Autor:
Ulrich Heinzmann, Marc Sacher, Dmitriy Ksenzov, F. Bienert, Stefan Hendel, Ullrich Pietsch, Souren Grigorian
Publikováno v:
physica status solidi (a). 206:1875-1879
Recent experiments on a soft X-ray free-electron laser (XFEL) source (FLASH in Hamburg) have shown that multilayers (MLs) can be used as optical elements for highly intense Xray irradiation. An effort to find most appropriate MLs has to consider the
Autor:
Wiebke Hachmann, Nikolay M. Kabachnik, Ulf Kleineberg, Ulrich Neuhäusler, Ferenc Krausz, Stefan Hendel, Vladislav S. Yakovlev, Th. Uphues, M. Uiberacker, Ulrich Heinzmann, A. Wonisch
Publikováno v:
Springer Proceedings in Physics ISBN: 9781402060175
Aperiodic XUV multilayer coatings with broad spectral bandwidth and flat dispersion characteristics have been developed and fabricated as reflecting and spectrally filtering optical elements for attosecond XUV pulses. Based on a genetic computational
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09b191cb33965092beb2831e6062c200
https://doi.org/10.1007/978-1-4020-6018-2_51
https://doi.org/10.1007/978-1-4020-6018-2_51
Autor:
G. Schoenhense, J. Maul, Stefan Hendel, M. Merkel, N. Weber, Ulf Kleineberg, Jingquan Lin, Karsten Rott
Publikováno v:
Optics letters. 32(13)
A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM imag
Autor:
Ferenc Krausz, B. E. Schmidt, Andrius Baltuška, A. L. Cavalieri, Balint Horvath, Markus Drescher, Ronald Holzwarth, Stefan Hendel, Pedro M. Echenique, Norbert Müller, Ulrich Heinzmann, Thorsten Uphues, Vladislav S. Yakovlev, L. Blumel, Reinhard Kienberger, Ulf Kleineberg
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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instname
Comprehensive knowledge of the dynamic behaviour of electrons in condensed-matter systems is pertinent to the development of many modern technologies, such as semiconductor and molecular electronics, optoelectronics, information processing and photov
Autor:
Matthias F. Kling, Stefan Hendel, Jens Rauschenberger, Thorsten Uphues, Nikolay M. Kabachnik, Aart J. Verhoef, Ulrich Heinzmann, Marcus Vrakking, Martin Schultze, Markus Drescher, M. Uiberacker, H. G. Muller, Hartmut Schröder, Ferenc Krausz, Ulf Kleineberg, Matthias Lezius, Karl L. Kompa, Vladislav S. Yakovlev
Publikováno v:
Scopus-Elsevier
This report presents the first real-time observation of electron tunnelling and multi-electron dynamics in atoms exposed to intense light. The observed sub-femtosecond ionization steps provide a powerful means of probing the transient population of s
Autor:
J. Maul, Karsten Rott, G. Schoenhense, M. Merkel, Jingquan Lin, Ulf Kleineberg, Stefan Hendel, N. Weber
Publikováno v:
23rd European Mask and Lithography Conference.
A new actinic mask inspection technology to probe nano-scaled defects buried underneath a Mo/Si multilayer reflection coating of an Extreme Ultraviolet Lithography mask blank has been implemented using EUV Photoemission Electron Microscopy (EUV-PEEM)
Autor:
Nikolay M. Kabachnik, Aart J. Verhoef, Stefan Hendel, Ferenc Krausz, Karl L. Kompa, Thorsten Uphues, Ulf Kleineberg, Jens Rauschenberger, Markus Drescher, M. Uiberacker, Vladislav S. Yakovlev, Ulrich Heinzmann, H. G. Muller, Hartmut Schröder, Matthias Lezius, Matthias F. Kling, Martin Schultze, Marc J. J. Vrakking
Atoms exposed to intense light lose one or more electrons and become ions. In strong fields, the process is predicted to occur via tunnelling through the binding potential that is suppressed by the light field near the peaks of its oscillations. Here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b602cb4380faabafd5c7c323b3cba29b
https://doi.org/10.1038/nature05648
https://doi.org/10.1038/nature05648
Autor:
Peredkov, Sergey1 sergey.peredkov@cec.mpg.de, Pereira, Nilson1,2, Grötzsch, Daniel3, Hendel, Stefan4, Wallacher, Dirk4, DeBeer, Serena1
Publikováno v:
Journal of Synchrotron Radiation. May2024, Vol. 31 Issue 3, p622-634. 13p.