Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Stefan Hascik"'
Autor:
Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, Róbert Kúdela
Publikováno v:
Materials, Vol 14, Iss 13, p 3461 (2021)
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As cha
Externí odkaz:
https://doaj.org/article/d37aae93acfa4b47bd36251c079aff0f
Autor:
Dagmar Gregusova, Ondrej Pohorelec, Milan Tapajna, Michal Blaho, Filip Gucmann, Roman Stoklas, Stanislav Hasenohrl, Agata Laurencikova, Peter Sichman, Stefan Hascik, Jan Kuzmik
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1558575022e18571916c816dd51b1bfd
https://doi.org/10.1109/imfedk53601.2021.9637667
https://doi.org/10.1109/imfedk53601.2021.9637667
Autor:
Dusan Pudis, Lubos Suslik, Jaroslava Skriniarova, Jaroslav Kovac, Ivana Kubicova, Ivan Martincek, Stefan Hascik, Peter Schaaf
Publikováno v:
Applied Surface Science. 269:161-165
In this paper, effect of two-dimensional photonic crystal surface pattern on the emission properties of the GaAs/AlGaAs based light emitting diode (LED) is demonstrated. For surface patterning of the LED, the interference lithography based on a doubl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfc323eb4116a294f2f59f471b90076
https://doi.org/10.1016/j.apsusc.2012.10.030
https://doi.org/10.1016/j.apsusc.2012.10.030
Autor:
Lubos Suslik, Dusan Pudis, Jaroslava Skriniarova, Jaroslav Kovac, Ivana Kubicova, Jozef Novak, Stefan Hascik
Publikováno v:
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
Photonic crystals (PhC) create platform for a new generation of optical and optoelectronical devices. The PhC structures have been patterned in GaAs-based light emitting diodes in order to modify their optical properties. Patterned diodes with two-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ade6ad92bb6fdc0fde51144fbe834b4b
https://doi.org/10.1109/asdam.2012.6418538
https://doi.org/10.1109/asdam.2012.6418538
Autor:
Stefan Hascik, Jozef Osvald
Publikováno v:
The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5aed7b2673abe453646be588fde445
https://doi.org/10.1109/asdam.2012.6418588
https://doi.org/10.1109/asdam.2012.6418588