Zobrazeno 1 - 2
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pro vyhledávání: '"Stefan Drapatz"'
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
This paper presents stability analysis of large-scale SRAM arrays directly after terminating NBTI stress. While the impact of static NBTI is well examined for cells and arrays, the fast-recovering component was not yet measured on SRAM arrays. The no
Autor:
Martin Ostermayr, Georg Georgakos, Doris Schmitt-Landsiedel, T. Fischer, Peter Huber, Ettore Amirante, Karl Hofmann, Stefan Drapatz
Publikováno v:
ESSCIRC
This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-V DD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measureme