SOL Transport and Filamentary Dynamics in High Density Tokamak Regimes

Autor: Antti Hakola, Nicola Vianello, Daniel Carralero, Cedric Tsui, Volker Naulin, Matteo Agostini, Boedo, J., Benoit Labit, Christian Theiler, Diego Aguiam, Scott Allan, Matthias Bernert, Stefan Costea, Istvan Cziegler, Hugo de Oliveira, Joaquin Galdon-Quiroga, Gustavo Grenfell, Codrina Ionita, Heinz Isliker, Alexander Karpushov, Jernej Kovacic, Bruce Lipschultz, Roberto Maurizio, Ken McClements, Fulvio Militello, Jeppe Olsen, Jens Juul Rasmussen, Timo Ravensbergen, Holger Reimerdes, Bernd Schneider, Roman Schrittwieser, Monica Spolaore, Kevin Verhaegh, Jose Vicente, Nick Walkden, Wei Zhang, Elisabeth Wolfrum

Publikováno v: Hakola, A, Vianello, N, Carralero, D, Tsui, C, Naulin, V, Agostini, M, Boedo, J, Labit, B, Theiler, C, Aguiam, D, Allan, S, Bernert, M, Costea, S, Cziegler, I, de Oliveira, H, Galdon-Quiroga, J, Grenfell, G, Ionita, C, Isliker, H, Karpushov, A, Kovacic, J, Lipschultz, B, Maurizio, R, McClements, K, Militello, F, Olsen, J, Rasmussen, J J, Ravensbergen, T, Reimerdes, H, Schneider, B, Schrittwieser, R, Spolaore, M, Verhaegh, K, Vicente, J, Walkden, N, Zhang, W & Wolfrum, E 2018, SOL Transport and Filamentary Dynamics in High Density Tokamak Regimes . in 27th IAEA Fusion Energy Conference : Programme and Abstracts . International Atomic Energy Agency IAEA, pp. 396-397, 27th IAEA Fusion Energy Conference, FEC 2018, Ahmedabad, India, 22/10/18 . < https://www.iaea.org/sites/default/files/18/10/cn-258-abstracts.pdf >
27th IAEA Fusion Energy Conference
VTT Technical Research Centre of Finland-PURE

Addressing the role of scrape off layer filamentary transport is a subject of intense studies in fusion science. Intermittent structures dominate transport in L-Mode and strongly contribute to particle and energy losses in H-mode. The role of convect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ce1496341293dba0a2ede713742460e9
https://cris.vtt.fi/en/publications/e6fa138a-3213-4b43-b274-5f3dc260fe81

Use of Tritium in the Study of Defects in Amorphous Silicon

Autor: Simone Pisana, Nazir P. Kherani, Stefan Costea, W. T. Shmayda, Tome Kosteski, Stefan Zukotynski, Franco Gaspari

Publikováno v: Fusion Science and Technology. 48:712-715

Hydrogen is known to strongly affect the physical properties of amorphous semiconductors. Indeed hydrogen is introduced during the growth of amorphous silicon films, used in active matrix displays and solar cells, to passivate silicon dangling bonds

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc4621466b246439298721ebabc9d955
https://doi.org/10.13182/fst05-a1023

Defect Density in Doped Amorphous Layer and Interface of Silicon Heterojunction Devices Obtained with the Constant Photocurrent Method

Autor: Davit Yeghikyan, Nazir P. Kherani, S. Zukotynski, Barzin Bahardoust, Stefan Costea

Publikováno v: 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

We present here the application of CPM for the examination of defect density in the doped amorphous silicon layer and the amorphous-crystalline silicon interface of silicon heterojunction photovoltaic devices. CPM derived absorption and internal quan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6bdfb888a9cb4ef8003231a9c529fe65
https://doi.org/10.1109/wcpec.2006.279393

Recombination in Tritiated Amorphous Silicon

Autor: Franco Gaspari, Tome Kosteski, Nazir P. Kherani, Stefan Costea, David Hum, W. T. Shmayda, Stefan Zukotynski

Publikováno v: MRS Proceedings. 609

Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illuminated conditions. There was a decrease in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4a5508bf5c4f9f2d6d6554f92879368
https://doi.org/10.1557/proc-609-a30.1

Tritiation of amorphous and crystalline silicon using T2 gas

Autor: Nazir P. Kherani, Stefan Zukotynski, Baojun Liu, Tome Kosteski, Armando B. Antoniazzi, Kevin P. Chen, Stefan Costea

Publikováno v: Applied Physics Letters. 89:044104

Incorporation of tritium in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at 250°C using tritium (T2) gas at pressures of up to 120atm is reported. The tritium is stored in a surface layer which is approximately 150 and 10nm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f05a4ca3398fe5334eadd1909b3d22f
https://doi.org/10.1063/1.2234844