Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Stefan Carolus Jacobus Antonius Keij"'
Autor:
Tom Hoogenboom, Michael Kubis, Martin Ebert, Jos Maas, Arthur Becht, Vidya Vaenkatesan, Hugo Augustinus Joseph Cramer, Stefan Carolus Jacobus Antonius Keij, Reinder Teun Plug, Andreas Fuchs, Kaustuve Bhattacharyya
Publikováno v:
27th European Mask and Lithography Conference.
As leading edge lithography is moving to 2x-nm design rules, lithography control complements resolution as one of the main drivers and enablers to meet the very stringent overlay, focus and CD requirements. As part of ASML's holistic lithography road
Autor:
Earl William Ebert, Irwan Dani Setija, Stefan Carolus Jacobus Antonius Keij, Gerbrand Van Der Zouw
Publikováno v:
SPIE Proceedings.
The wafer alignment system plays a key role in the reduction of product overlay. This reduction allows shrink of current products and tighter overlay design rules on next generation products. Further reduction of product overlay numbers requires cont
Autor:
Tatsuhiko Higashiki, Keita Asanuma, Hyun-Woo Lee, Stefan Carolus Jacobus Antonius Keij, Hiroaki Takikawa, Paul Christiaan Hinnen, Kazutaka Ishigo
Publikováno v:
SPIE Proceedings.
In this paper, alignment and overlay results on processed short-flow wafers are presented. The impact of various mark designs on overlay performance was investigated, using a newly developed phase grating wafer alignment sensor concept. This concept
Autor:
Hans Gijsbertsen, Maurits van der Schaar, Stefan Carolus Jacobus Antonius Keij, Giljam Derksen, Patrick W.H. de Jager, David Nijkerk
Publikováno v:
SPIE Proceedings.
The use of backscatter electron detection in a wafer alignment system has been investigated. For certain types of wafer processing such an alignment system might show improved process robustness compared to optical sensors. This expectation is based
Autor:
Jaap Burghoorn, Ramon Navarro, Frank van Bilsen, Arie Jeffrey Den Boef, Sicco Ian Schets, Ron Schuurhuis, Stefan Carolus Jacobus Antonius Keij, Geert Simons
Publikováno v:
SPIE Proceedings.
Applying current and forthcoming optical lithography Step & Scan systems for IC manufacturing with 100 nm device resolution requires constant reduction of the relevant product overlay contributors. The system's wafer alignment sensor plays a key role
Autor:
Shawn Lee, Gijs ten Haaf, Henry Megens, Igor Matheus Petronella Aarts, Leendertjan Karssemeijer, Jan Mulkens, Daan Slotboom, Haico Victor Kok, Ralph Brinkhof, Evert Mos, Simon Reinald Huisman, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Manouk Rijpstra, Irina Lyulina, Robert John Socha, Boris Menchtchikov, Stefan Carolus Jacobus Antonius Keij, Wim Tjibbo Tel, Chris de Ruiter, Michael Kubis
Publikováno v:
Optical Microlithography XXXII
Multi-patterning lithography for future technology nodes in logic and memory are driving the allowed on-product overlay error in an DUV and EUV matched machine operation down to values of 2 nm and below. The ASML ORION alignment sensor provides an ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::783d1943d7337abc9346b91e2b12d413