Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Stefan, Fölsch"'
Publikováno v:
Physical Review Research, Vol 6, Iss 3, p 033268 (2024)
Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electr
Externí odkaz:
https://doaj.org/article/7a24eb64334846ee8c064779dc0c35c1
Publikováno v:
Physical Review Research, Vol 6, Iss 1, p 013269 (2024)
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and t
Externí odkaz:
https://doaj.org/article/afa462c396a440939074cd1f61e8c3eb
Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff9148781910af5bad60738364737730
http://arxiv.org/abs/2112.00801
http://arxiv.org/abs/2112.00801
Autor:
Dacen, Waters, Yifan, Nie, Felix, Lüpke, Yi, Pan, Stefan, Fölsch, Yu-Chuan, Lin, Bhakti, Jariwala, Kehao, Zhang, Chong, Wang, Hongyan, Lv, Kyeongjae, Cho, Di, Xiao, Joshua A, Robinson, Randall M, Feenstra
Publikováno v:
ACS nano. 14(6)
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (θ = 0°), associated with flat bands in the Brillouin zone of the moiré pattern formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e76337f00204777367377822d0090ed8
https://pubmed.ncbi.nlm.nih.gov/32496750
https://pubmed.ncbi.nlm.nih.gov/32496750
Autor:
Joshua A. Robinson, Felix Lüpke, Yu-Chuan Lin, Chong Wang, Bhakti Jariwala, Di Xiao, Yifan Nie, Yi Pan, Hongyan Lv, Kehao Zhang, Randall M. Feenstra, Stefan Fölsch, Kyeongjae Cho, Dacen Waters
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the moir\'e patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::647252b7ef9a69d70a5ce53edcf99f7f
http://arxiv.org/abs/2004.07851
http://arxiv.org/abs/2004.07851
Publikováno v:
Physical review letters. 123(6)
We created hexagonal rings on a semiconductor surface by atom manipulation in a scanning tunneling microscope (STM). Our measurements reveal the generic level structure of a quantum ring, including its single ground state and doubly degenerate excite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2be4ca955f68398f3f393b64d4cd4ce3
https://pubmed.ncbi.nlm.nih.gov/31491176
https://pubmed.ncbi.nlm.nih.gov/31491176
Autor:
Kehao Zhang, Grayson R. Frazier, Bhakti Jariwala, Yu-Chuan Lin, Stefan Fölsch, Randall M. Feenstra, Joshua A. Robinson, Yi Pan
Publikováno v:
Journal of Vacuum Science & Technology A. 39:011001
Acquisition and analysis are described for scanning tunneling spectroscopy data acquired from a monolayer of WSe2 grown on epitaxial graphene on SiC. Curve fitting of the data is performed, in order to deduce band edge energies. In addition to descri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249749c330da386503c4756f5b6d4a7d
https://doi.org/10.1116/6.0000684
https://doi.org/10.1116/6.0000684
Autor:
Ke Xu, Baoming Wang, Stefan Fölsch, Joan M. Redwing, Jun Li, Tanushree H. Choudhury, Joshua A. Robinson, Christopher M. Smyth, Randall M. Feenstra, Kehao Zhang, Yi Pan, Yifan Nie, Susan K. Fullerton-Shirey, Robert M. Wallace, Yu-Chuan Lin, Bhakti Jariwala, Brian M. Bersch, Xiaotian Zhang, Sarah M. Eichfeld, Kyeongjae Cho, Rafik Addou, M. Aman Haque
Publikováno v:
ACS nano. 12(2)
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal–organic chemical vapor deposition and prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ad1f4f2c8e46e8a3b5b8cf571e70f1
https://pubmed.ncbi.nlm.nih.gov/29360349
https://pubmed.ncbi.nlm.nih.gov/29360349
Autor:
Elina Locane, Piet W. Brouwer, J. Martínez-Blanco, Kiyoshi Kanisawa, Christophe Nacci, Stefan Fölsch, Mark Thomas, Steven C. Erwin, Felix von Oppen
Publikováno v:
Nature Physics. 11:640-644
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual orbitals.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3caf67ea50f3eecdca8d1434eee66df3
https://doi.org/10.1038/nphys3385
https://doi.org/10.1038/nphys3385
Autor:
Stefan Fölsch, Kyeongjae Cho, Yu-Chuan Lin, Randall M. Feenstra, Yifan Nie, Bhakti Jariwala, Joshua A. Robinson, Yi Pan
Publikováno v:
2D Materials. 6:021001
Author(s): Pan, Y; Folsch, S; Lin, YC; Jariwala, B; Robinson, JA; Nie, Y; Cho, K; Feenstra, RM | Abstract: Scanning tunneling microscopy (STM) at 5 K is used to study WSe2 layers grown on epitaxial graphene which is formed on Si-terminated SiC(0 0 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d86a9518d5ce0792288db8f0a9a91d7
https://doi.org/10.1088/2053-1583/aaf58c
https://doi.org/10.1088/2053-1583/aaf58c