Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Stefan, Degendt"'
Autor:
Vivek, Mootheri, Alessandra, Leonhardt, Devin, Verreck, Inge, Asselberghs, Cedric, Huyghebaert, Stefan, Degendt, Iuliana, Radu, Dennis, Lin, Marc M, Heyns
Publikováno v:
Nanotechnology. 32(13)
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::3f0600a8a2a31ac3e6594dcfbacee2c5
https://pubmed.ncbi.nlm.nih.gov/33410418
https://pubmed.ncbi.nlm.nih.gov/33410418
Autor:
Stefan DeGendt
Publikováno v:
The Electrochemical Society Interface. 29:7-7
What else is there to talk about? Sure, I did anticipate my transition into the role of ECS President differently. At the time of writing this editorial, the worldwide pandemic is still raging, with positive indications on the horizon and prospects f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34d9358a2d764f5ab4c77c923f04ee1
https://doi.org/10.1149/2.002202if
https://doi.org/10.1149/2.002202if
Autor:
Amir-Hossein Tamaddon, Harold Philipsen, Paul W Mertens, Guy Vereecke, Frank Holsteyns, Marc Heyns, Stefan DeGendt, John Kelly, Dennis H. van Dorp
Publikováno v:
ECS Meeting Abstracts. :1026-1026
Wet nanoscale etching of silicon is very dependent to surface reactive sites like step edges, defect densities, and crystallographic planes [1]. Ultra-pure water (UPW) used during rinsing and drying steps is etching silicon in the sub-nanometer range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c98d3e9dc09460f58e1e6d3a690da61
https://doi.org/10.1149/ma2015-02/27/1026
https://doi.org/10.1149/ma2015-02/27/1026
Autor:
S. Kubicek, Shigenori Hayashi, Serge Biesemans, M. Niwa, Stefan Degendt, Riichirou Mitsuhashi, K. Yamamoto, Aude Rothchild
Publikováno v:
Defects in High-k Gate Dielectric Stacks ISBN: 1402043651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b29f34cba3201ad19541e43004e200c
https://doi.org/10.1007/1-4020-4367-8_1
https://doi.org/10.1007/1-4020-4367-8_1
Autor:
Luigi Pantisano, Philippe Roussel, Enrique San Andrés, Stefan DeGendt, Guido Groeseneken, Simone Severi, Maria Toledano-Luque, Lionel Trojman
Publikováno v:
ECS Meeting Abstracts. :1143-1143
High-k characterization by RFCV E. San Andres, L. Pantisano, Ph. J. Roussel, M. Toledano-Luque, L. Trojman, S. Severi, S. DeGendt, G.Groeseneken. Universidad Complutense de Madrid, Electricity and Electronics Dept., Spain. IMEC, Leuven, Belgium. KULe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c7659c562026ba51ce3a8030e31463
https://doi.org/10.1149/ma2007-02/20/1143
https://doi.org/10.1149/ma2007-02/20/1143