Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

Autor: Ermolaev, G. A., Grudinin, D. V., Stebunov, Y. V., Voronin, K. V., Kravets, V. G., Duan, J., Mazitov, A. B., Tselikov, G. I., Bylinkin, A., Yakubovsky, D. I., Novikov, S. M., Baranov, D. G., Nikitin, A. Y., Kruglov, I. A., Shegai, T., Alonso-González, P., Grigorenko, A. N., Arsenin, A. V., Novoselov, K. S., Volkov, V. S.

Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near

Externí odkaz: http://arxiv.org/abs/2006.00884

Photogating in graphene field-effect phototransistors: Theory and observations

Autor: Voronin, K. V., Ermolaev, G. A., Stebunov, Y. V., Arsenin, A. V., Bylinkin, A. N., Jensen, B. B.E., Jørgensen, B., Volkov, V. S., Volkov, Valentyn, Nikitin, Alexey, Arsenin, Aleksey V.

Publikováno v: Proceedings of International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019
Voronin, K V, Ermolaev, G A, Stebunov, Y V, Arsenin, A V, Bylinkin, A N, Jensen, B B E, Jørgensen, B & Volkov, V S 2021, Photogating in graphene field-effect phototransistors : Theory and observations . in V Volkov, A Nikitin & A V Arsenin (eds), Proceedings of international congress on graphene, 2d materials and applications (2d materials 2019) ., 020034, AIP Publishing LLC, AIP Conference Proceedings, no. 1, vol. 2359, 1st International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019, Sochi, Russian Federation, 30/09/2019 . https://doi.org/10.1063/5.0054954
Voronin, K V, Ermolaev, G A, Stebunov, Y V, Arsenin, A V, Bylinkin, A N, Jensen, B B E, Jørgensen, B & Volkov, V S 2021, Photogating in graphene field-effect phototransistors : Theory and observations . in V Volkov, A Nikitin & A V Arsenin (eds), Proceedings of International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019 ., 020034, American Institute of Physics Inc., AIP Conference Proceedings, no. 1, vol. 2359, 1st International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019, Sochi, Russian Federation, 30/09/2019 . https://doi.org/10.1063/5.0054954

In this work, we investigate graphene field-effect phototransistor based on photogating. We discuss the theory of this effect and predict such characteristics as the dependence of photoresponse on the gate voltage. To verify our considerations, we fa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8168274be51054ac9d5e2fe21bc92d87
https://pure.amc.nl/en/publications/photogating-in-graphene-fieldeffect-phototransistors(360e04fd-5984-4c32-af0d-dd16cdd61acd).html

Excitonic nature of dispersion of two-dimensional transition metal dichalcogenides and effect of annealing on excitons

Autor: Ermolaev, G. A., Komissar, D. A., Krivova, G. M., Tatarkin, D. E., Voronin, K. V., Yakubovsky, D. I., Stebunov, Y. V., Arsenin, A. V., Novikov, S. M., Volkov, V. S.

Publikováno v: Ermolaev, G A, Komissar, D A, Krivova, G M, Tatarkin, D E, Voronin, K V, Yakubovsky, D I, Stebunov, Y V, Arsenin, A V, Novikov, S M & Volkov, V S 2020, ' Excitonic nature of dispersion of two-dimensional transition metal dichalcogenides and effect of annealing on excitons ', Journal of Physics: Conference Series, vol. 1461, 012036 . https://doi.org/10.1088/1742-6596/1461/1/012036

In present study, we develop an effective and universal technique for retrieving dispersion of bulk and monolayer TMDs from spectroscopic ellipsometry measurements. The basis of the method is excitonic nature of the dispersion. In addition, we demons

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3062::4a85bb9f4181181eefc34dc05c168fa3
https://findresearcher.sdu.dk:8443/ws/files/169992583/Ermolaev_2020_J._Phys._Conf._Ser._1461_012036.pdf

Substrate effects in graphene field-effect transistor photodetectors

Autor: Voronin, K. V., Ermolaev, G. A., Stebunov, Y. V., Arsenin, A. V., Bylinkin, A. N., Jensen, B. B.E., Jørgensen, B., Volkov, V. S.

Publikováno v: Voronin, K V, Ermolaev, G A, Stebunov, Y V, Arsenin, A V, Bylinkin, A N, Jensen, B B E, Jørgensen, B & Volkov, V S 2020, ' Substrate effects in graphene field-effect transistor photodetectors ', Journal of Physics: Conference Series, vol. 1461, 012188 . https://doi.org/10.1088/1742-6596/1461/1/012188

In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a5c7e454cd105ee2ec4075651fb45d69
https://pure.au.dk/ws/files/226437232/Voronin_2020_J._Phys._Conf._Ser._1461_012188.pdf

Surface-enhanced raman spectroscopy on ultrathin gold/graphene substrates near the percolation threshold.

Autor: Tatarkin, D. E., Yakubovsky, D. I., Komissar, D. A., Stebunov, Y. V., Arsenin, A. V., Volkov, V. S., Novikov, S. M., Volkov, Valentyn, Nikitin, Alexey, Arsenin, Aleksey V.

Publikováno v: AIP Conference Proceedings; 2021, Vol. 2359 Issue 1, p1-4, 4p