Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Steblenko, L.P."'
Autor:
Korotchenkov, O.O., Steblenko, L.P., Podolyan, A.O., Kalinichenko, D.V., Tesel’ko, P.O., Kravchenko, V.M., Tkach, N.V.
The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::0de2cf10ee6a53954df4a8fc7cc7aa2d
http://dspace.nbuv.gov.ua/handle/123456789/117665
http://dspace.nbuv.gov.ua/handle/123456789/117665
Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO₂ op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::6d5a8e91821882fcf6753698667862d2
http://dspace.nbuv.gov.ua/handle/123456789/117754
http://dspace.nbuv.gov.ua/handle/123456789/117754
Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the concentration of alkali metals (K, Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::884ed75e1b3013cc1535ea34ed42cafc
http://dspace.nbuv.gov.ua/handle/123456789/118562
http://dspace.nbuv.gov.ua/handle/123456789/118562
Autor:
Trachevsky, V.V., Steblenko, L.P., Demchenko, P.Y., Koplak, O.V., Kuryliuk, A.M., Melnik, A.K.
In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::040584190b97070bee1e3d7f5c88173d
http://dspace.nbuv.gov.ua/handle/123456789/117805
http://dspace.nbuv.gov.ua/handle/123456789/117805
Autor:
Makara, V.A., Steblenko, L.P., Kuryliuk, A.M., Naumenko, S.M., Kolchenko, Iu.L., Kravchenko, V.M.
Microhardness variations in germanium crystals caused by a weak constant magnetic field have been studied. It is fount that the magnetomechanical effect, that is relative change in microhardness, becomes relaxed in time. The results obtained indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::619a36137041fd0d29a20bf06e8f2f31
http://dspace.nbuv.gov.ua/handle/123456789/136441
http://dspace.nbuv.gov.ua/handle/123456789/136441
Autor:
Makara, V.A., Pogorilyi, A.M., Steblenko, L.P., Kuryliuk, A.M., Naumenko, S.M., Kobzar, Yu.L., Kravets, A.F., Podyalovsky, D.I., Matveeva, O.V.
The magnetoresonance influence as well as the micrawave superhigh-frequency (SHF) magnetic field effect on the microhardness of silicon crystals has been studied. It is established that the action of SHF field results in decreasing microhardness, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::5922f5e63b5fea8b1910b9495e3727ea
http://dspace.nbuv.gov.ua/handle/123456789/136494
http://dspace.nbuv.gov.ua/handle/123456789/136494
Autor:
Makara, V.A., Steblenko, L.P., Kolchenko, Yu.L., Naumenko, S.M., Lisovsky, I.P., Mazunov, D.O., Mokliak, Yu.Yu.
IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::8b75a3ae172948d9b4f0c3e0eb0ad45d
http://dspace.nbuv.gov.ua/handle/123456789/121440
http://dspace.nbuv.gov.ua/handle/123456789/121440
Autor:
Makara, V.A., Kolomiets, A.M., Kolchenko, Yu.L., Naumenko, S.M., Rudenko, O.V., Steblenko, L.P.
The part played by electric current pulses in formation of residual electroplastic effect and the "electric memory" effect in dislocation-containing silicon crystals has been investigated. The character of the observed effects has been found to be de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::40a5e220a6fc8176f53b724f8843180f
http://dspace.nbuv.gov.ua/handle/123456789/138821
http://dspace.nbuv.gov.ua/handle/123456789/138821
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Makara, V.A., Steblenko, L.P., Kolchenko, Yu.L., Naumenko, S.M., Patran, O.A., Kravchenko, V.M., Dranenko, O.S.
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; December 2005, Vol. 108 Issue: 1 p339-344, 6p
