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Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si^†.

Autor: Nicoloiu, Alexandra, Boldeiu, George, Nastase, Claudia, Nedelcu, Monica, Ciornei, Cristina, Zdru, Ioana, Stavrinidis, George, Vasilache, Dan, Stavrinidis, Antonis, Dinescu, Adrian, Konstantinidis, George, Müller, Alexandru

Publikováno v: IEEJ Transactions on Electrical & Electronic Engineering; May2024, Vol. 19 Issue 5, p900-907, 8p

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4H-SiC VJFETs with Self-Aligned Contacts

Autor: Zekentes, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Vassilevski, Konstantin, Horsfall, Alton, Wright, Nick, Brosselard, Pierre, Niu, Shiqin, Lazar, Mihai, Planson, Dominique, Tournier, Dominique, Camara, Nicolas

Publikováno v: Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75

International audience; Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bd394ca9a036b7cb311d3a5a41b32436
https://hal.science/hal-02133681

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Autor: Kayambaki, Maria, Makris, Nikolaos, Tsagaraki, Katerina, Peyré, Hervé, Stavrinidis, Antonis, Konstantinidis, George, Zekentes, Konstantinos

Publikováno v: Materials Science Forum; July 2019, Vol. 963 Issue: 1 p328-331, 4p