Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Stavrias, N."'
Autor:
Pavlov, S.G., Tarelkin, S.A., Bormashov, V.S., Stavrias, N., Saeedi, K., van der Meer, A.F.G., Bekin, N.A., Zhukavin, R.Kh., Shastin, V.N., Kuznetsov, M.S., Terentiev, S.A., Nosukhin, S.A., Prikhodko, D.D., Blank, V.D., Wienold, M., Hübers, H.-W.
Publikováno v:
In Diamond & Related Materials February 2019 92:259-265
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum information,
Externí odkaz:
http://arxiv.org/abs/1210.5047
Autor:
Gaebel, T., Domhan, M., Popa, I., Wittmann, C., Neumann, P., Jelezko, F., Rabeau, J. R., Stavrias, N., Greentree, A. D., Prawer, S., Meijer, J., Twamley, J., Hemmer, P. R., Wrachtrup, J.
Publikováno v:
Nature Physics 2: 408-413 (2006)
Coherent coupling between single quantum objects is at the heart of modern quantum physics. When coupling is strong enough to prevail over decoherence, it can be used for the engineering of correlated quantum states. Especially for solid-state system
Externí odkaz:
http://arxiv.org/abs/quant-ph/0605038
Autor:
Zhukavin, R. Kh., Pavlov, S. G., Stavrias, N., Saeedi, K., Kovalevsky, K. A., Phillips, P. J., Tsyplenkov, V. V., Abrosimov, N. V., Riemann, H., Deβmann, N., Hübers, H.-W., Shastin, V. N.
Publikováno v:
Journal of Applied Physics; 1/21/2020, Vol. 127 Issue 3, p1-8, 8p, 1 Diagram, 6 Graphs
Autor:
Thewalt, M.L.W., Steger, M., Yang, A., Stavrias, N., Cardona, M., Riemann, H., Abrosimov, N.V., Churbanov, M.F., Gusev, A.V., Bulanov, A.D., Kovalev, I.D., Kaliteevskii, A.K., Godisov, O.N., Becker, P., Pohl, H.-J., Ager, J.W., III, Haller, E.E.
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 401:587-592
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2006 251(2):395-401
Dynamics of Terahertz Excitations in Group-IV Semiconductors Doped by Hydrogen-Like Impurity Centers
Autor:
Pavlov, Sergey, Deßmann, N., Pohl, Andreas, Zhukavin, R. Kh., Kovalevsky, K.A., Tarelkin, S. A., Bormashov, V. S., Choporova, Yu. Yu., Lynch, S. A., Litvinenko, K. L., Redlich, B., Stavrias, N., van der Meer, A. F. G., Tsyplenkov, V. V., Bekin, N.A., Shastin, V. N., Knyazev, B. A., Terentiev, S. A., Blank, V. D., Murdin, B. N., Winnerl, Stefan, Klopf, J.M., Abrosimov, N. V., Riemann, H., Hübers, Heinz-Wilhelm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1640::f24f1b89c28e03d572f855fd37c06726
https://elib.dlr.de/133616/
https://elib.dlr.de/133616/
Publikováno v:
EPJ Web of Conferences, Vol 35, p 03002 (2012)
We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) to analyse these st
Externí odkaz:
https://doaj.org/article/1027297c3d0f47a38ed4b467eb45230b
Publikováno v:
EPJ Web of Conferences. 2012, Issue 35, preceding p03002-p.2-03002-p.5. 5p.
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