Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Stas Polonsky"'
Autor:
Nikita M. Kondratiev, Stas Polonsky, Maxim Ryabko, Andrey S. Voloshin, S. Koptyaev, I. A. Bilenko, Sofya E. Agafonova
Publikováno v:
Semiconductor Lasers and Laser Dynamics IX.
The ultra-narrow linewidth diode lasers self-injection locked to high-Q crystalline microresonators are available commercially, providing the linewidth below 1 kHz for various wavelengths and enabling microcomb generation. Here we demonstrate a techn
Publikováno v:
Microelectronics Reliability. 45:1471-1475
We propose a simple, noninvasive, optical technique to measure intra-wafer and intra-chip MOSFET performance variations. Technique utilizes correlation between device performance and weak near-infrared emission from its off-state current. It maps per
Autor:
M. Guillorn, Deqiang Wang, Steve Rossnagel, Lynne Gignac, Qinghuang Lin, Sung-Wook Nam, Ajay K. Royyuru, Robert L. Bruce, Gustavo Stolovitzky, P. J. Litwinowicz, Armand Galan, Dirk Pfeiffer, Evan G. Colgan, Ronald D. Goldblatt, S. Papa Rao, J.J. Bucchignano, Markus Brink, Michael F. Lofaro, Chao Wang, W. H. Advocate, Elizabeth A. Duch, E. Kratschmer, C. M. Breslin, John M. Cotte, William Henry Price, Christopher V. Jahnes, Stas Polonsky, Hongbo Peng, Eric A. Joseph
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We report sub-20 nm sacrificial nanochannels that enable stretching and translocating single DNA molecules. Sacrificial silicon nano-structures were etched with XeF2 to form nanochannels. Translocations of linearized DNA single molecules were imaged
Autor:
William V. Huott, Steven E. Steen, Jeffrey A. Kash, James C. Tsang, Stas Polonsky, M.K. Mc Manus, Daniel R. Knebel
Publikováno v:
Microelectronics Reliability. 40:1353-1358
Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors
Autor:
Stas Polonsky, Alan J. Weger
Publikováno v:
Applied Physics Letters. 85:2390-2392
Luminescence of deep submicron metal-oxide-semiconductor field-effect transistors in the off state has been detected and characterized. It exponentially depends on voltages applied to the device and behaves similarly to its off-state leakage current.
Publikováno v:
2012 IEEE International Conference on Microelectronic Test Structures.
We present a simple test structure to measure C-V and I-V curves of the same nominal size FET. The structure is simple enough to be used for technology development, requires only first metal for routing, and allows parallel test. It is an extension o
Publikováno v:
2011 IEEE ICMTS International Conference on Microelectronic Test Structures.
We report on Front-End-Of-Line Quadrature-clocked Voltage-dependent Capacitance Measurement (QVCM), a charge based capacitance measurement technique applicable to modern logic CMOS technologies with leaky gate oxides. QVCM test structures are designe
Autor:
Hongbo Peng, Binquan Luan, Gustavo Stolovitzky, Glenn J. Martyna, Stefan Harrer, Stas Polonsky, Ali Afzali, Philip S. Waggoner
A biomimetic nanochannel coated with a self-assembled monolayer (SAM) can be used for sensing and analyzing biomolecules. The interaction between a transported biomolecule and a SAM governs the mechanically or electrically driven motion of the molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b85c16f0acf0fb10aaea347b0d4a2382
https://europepmc.org/articles/PMC3013290/
https://europepmc.org/articles/PMC3013290/
Autor:
Binquan Luan, Hongbo Peng, Glenn J. Martyna, Steve Rossnagel, Stas Polonsky, Gustavo Stolovitzky
Publikováno v:
Physical review letters. 104(23)
The benefits of low-cost, high-throughput human genome sequencing to medical science has inspired recent experimental work focused on DNA translocation through solid-state nanopores. Given that microelectronic fabrication methods permit the integrati
Autor:
Paul M. Solomon, Laertis Economikos, Mark B. Ketchen, Stas Polonsky, Ernesto Shiling, Manjul Bhushan
Publikováno v:
International Symposium for Testing and Failure Analysis.
We compare different dc current-based integrated capacitance measurement techniques in terms of their applicability to modern CMOS technologies. The winning approach uses quadrature detection to measure mutual Front-End-Of-Line (FEOL) and Back-End-Of