Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Starosel’skii, A."'
Autor:
Guminov, N.1 gummi.qdn@gmail.com, Starosel’skii, V.1
Publikováno v:
Semiconductors. Dec2009, Vol. 43 Issue 13, p1663-1666. 4p. 1 Diagram, 3 Graphs.
Autor:
V. I. Starosel’skii, N. V. Guminov
Publikováno v:
Semiconductors. 43:1663-1666
Voltage followers are considered for devices of processing microwave information, which are made from field-effect transistors based on III–V semiconductor compounds with a control barrier contact. The properties of a precision voltage follower wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9807935648b17d250d089f365e7dc4ff
https://doi.org/10.1134/s1063782609130107
https://doi.org/10.1134/s1063782609130107
Autor:
A. Starosel’skii, N. I. Dobina, L. B. Getsov, A. I. Rybnikov, N. V. Tumanov, Artem S. Semenov
Publikováno v:
Strength of Materials. 40:538-551
Specific features of thermal fatigue fracture of a monocrystalline alloy used in manufacturing of rotor blades of gas-turbine units are investigated. The dependences of the number of cycles to failure on the crystallographic orientation of the materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3959002aa1b48c02190415bb611a0fbd
https://doi.org/10.1007/s11223-008-9076-1
https://doi.org/10.1007/s11223-008-9076-1
Publikováno v:
Russian Microelectronics. 36:415-421
The reverse gate current of heterostructure MESFETs is studied experimentally. The behavior of the reverse I-V characteristic is shown to be consistent with the tunneling mechanism of the current. The curve is discussed with regard to two special fea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec3f702c5add6ddb76f637fa9581e27
https://doi.org/10.1134/s1063739707060091
https://doi.org/10.1134/s1063739707060091
Publikováno v:
Russian Microelectronics. 36:209-220
A model of the diode-connected GaAs Schottky-gate field-effect transistor (SFET) has been proposed. The SFETs with uniform and δ-doped channels are considered. The model accounts for the distributive character of the channel’s resistive regions un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f7432f0e51cd64a889ddff16df0059
https://doi.org/10.1134/s1063739707040014
https://doi.org/10.1134/s1063739707040014
Autor:
V. V. Losev, V. I. Starosel'skii
Publikováno v:
Russian Microelectronics. 33:188-194
A computer simulation is conducted of power consumption in the 1n–1p type of asymptotically adiabatic static logic gate. The increase is estimated in dissipation due to violation of any single condition of thermodynamic reversibility. The dissipati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9b38a7573e80434d9f3c7201ae7593f
https://doi.org/10.1023/b:rumi.0000026177.63207.06
https://doi.org/10.1023/b:rumi.0000026177.63207.06
Autor:
V. I. Starosel'skii, V. V. Losev
Publikováno v:
Russian Microelectronics. 32:323-332
A computer simulation is carried out to investigate the power consumption of major quasi-adiabatic logic gates. Anomalously high dissipation is found at low clock rates. An explanation for the anomaly and a method of eliminating this are proposed. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0967ae9a079eadd41cd986c2ca741149
https://doi.org/10.1023/a:1027331926087
https://doi.org/10.1023/a:1027331926087
Autor:
V. I. Starosel'skii, V. V. Losev
Publikováno v:
Russian Microelectronics. 31:143-148
A new type of quasi-adiabatic dynamic MOS logic is proposed, which uses only n-channel FETs. With this approach, an N-input logic gate has N + 2 devices. The term quasi-adiabatic means that most of the energy delivered to the load capacitor returns t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2835dc42eaa60f390b7a88225cbcd63
https://doi.org/10.1023/a:1015454802271
https://doi.org/10.1023/a:1015454802271
Autor:
V. I. Starosel'skii
Publikováno v:
Russian Microelectronics. 31:37-58
The current status of research and development in the field of adiabatic electronic devices for the production of information is reviewed. The adiabatic property means that the power supply regains most of the energy expended on computing. A design p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a97e1bc078df3577c8c3c44c2ed2dd
https://doi.org/10.1023/a:1013857006906
https://doi.org/10.1023/a:1013857006906
Autor:
V. I. Starosel’skii, K. A. Valiev
Publikováno v:
Russian Microelectronics. 29:77-90
Requirements for a completely reversible (in thermodynamic terms) binary logic gate in which the computing energy returns to the system and is used in subsequent computations are put forward. A set of elements of the reversible gate is considered, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c298aba503ebc943ebc0e0a29a0ac2
https://doi.org/10.1007/bf02773239
https://doi.org/10.1007/bf02773239