Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band

Autor: Chéron, Jérôme, Campovecchio, Michel, Barataud, Denis, Reveyrand, Tibault, Stanislawiak, M., Eudeline, P., Floriot, D., Demenitroux, Wilfried

Publikováno v: Proceedings of the 41st European Microwave Conference, EuMW 2011
41st European Microwave Conference, EuMW 2011
41st European Microwave Conference, EuMW 2011, Oct 2011, Manshester, United Kingdom. pp.1111-1114

International audience; This paper presents a method for synthesizing the package of power GaN transistors in order to achieve wideband matching at harmonics. The proposed method is applied to optimize the package of a 15W power GaN HEMT for high eff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c7b2f1e5d41dac488417751053e0cbad
https://hal.archives-ouvertes.fr/hal-00701038

Wideband harmonic control of high efficiency high power GaN amplifiers in S-Band and power packaging issues

Autor: Chéron, Jérôme, Campovecchio, Michel, Barataud, Denis, Reveyrand, Tibault, Stanislawiak, M., Tolant, Clément, Eudeline, Philippe, Floriot, D.

Publikováno v: 5 th Space Agency-MOD Round Table Workshop on GaN Microwave Component Technologies
MOD Round Table Workshop on GaN Component Technologies, ESTEC
MOD Round Table Workshop on GaN Component Technologies, ESTEC, Sep 2010, Noordwijk, Netherlands. pp.2-5

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d3e9f6923a83073bf1536c38e1dcfc15
https://hal.archives-ouvertes.fr/hal-00607002

Simulation d'un limiteur bande S forte puissance a l'aide d'un nouveau modèle non-linéaire de diodes p-i-n

Autor: Gatard, Emmanuel, Bouysse, Philippe, Sommet, Raphaël, Quéré, Raymond, Stanislawiak, M., Tolant, C., Bureau, J.M.

Publikováno v: 15èmes Journées Nationales Microondes.
15èmes Journées Nationales Microondes., May 2007, TOULOUSE, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4515c7e13b0f17d473077710335e4d86
https://hal.archives-ouvertes.fr/hal-00196680

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A reliability-based AlGaN/GaN HEMT model considering high drain bias voltage RF ageing.

Autor: Fonder, J.-B., Duperrier, C., Latry, O., Stanislawiak, M., Maanane, H., Eudeline, P., Temcamani, F.

Publikováno v: 2012 7th European Microwave Integrated Circuit Conference; 2012, p72-75, 4p