Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Stanislav Sin"'
Autor:
Stanislav Sin, Saeroonter Oh
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Spintronic devices are regarded as a promising solution for future computing and memory technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS back-end process. However, the major drawbacks of modern curren
Externí odkaz:
https://doaj.org/article/7f569e30ec834c36963c2fd31f7a4c22
Autor:
Stanislav Sin, Saeroonter Oh
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Magnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, red
Externí odkaz:
https://doaj.org/article/2700bacbfb894d5e8fa4b13244076fb0
Publikováno v:
IEEE Access, Vol 9, Pp 32298-32309 (2021)
In this study, a cumulative/differential winding switching method is proposed for the extended constant power operation (CPO) of a surface-permanent magnet (SPM) machine. In this method, the three-phase winding of the machine is divided into two equa
Externí odkaz:
https://doaj.org/article/29bcb00feaad4c15b3fae68ac8f60ebd
Publikováno v:
IEEE Access, Vol 8, Pp 105922-105935 (2020)
This paper proposes an operation method for the extended speed range of a surface-mounted permanent magnet (SPM) synchronous machine. The proposed method is based on a novel winding changeover scheme. The SPM machine has low synchronous inductance an
Externí odkaz:
https://doaj.org/article/ad0e7221a33f41119144a33cf3f953de
Publikováno v:
IEEE Access, Vol 8, Pp 169470-169485 (2020)
Typically, a surface-mounted permanent magnet synchronous machine (SPMSM) has a poor flux-weakening performance due to its low synchronous inductance; hence, its speed is proportional to the supply voltage. A relatively high DC-link voltage is requir
Externí odkaz:
https://doaj.org/article/e6814485889a476b9646742f7676db1d
Autor:
Stanislav Sin, Saeroonter Oh
Magnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, reducing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7389f0084797bdabd713738319210c9
https://doi.org/10.21203/rs.3.rs-1906427/v1
https://doi.org/10.21203/rs.3.rs-1906427/v1
Publikováno v:
IEEE Access, Vol 8, Pp 105922-105935 (2020)
This paper proposes an operation method for the extended speed range of a surface-mounted permanent magnet (SPM) synchronous machine. The proposed method is based on a novel winding changeover scheme. The SPM machine has low synchronous inductance an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aeac1b2cd14dc7aa773cd73e89b6085
https://ieeexplore.ieee.org/document/9109268/
https://ieeexplore.ieee.org/document/9109268/
Autor:
Cheng Ji, Bing Li, Wenjun Liu, Jesse S. Smith, Alexander Björling, Arnab Majumdar, Wei Luo, Rajeev Ahuja, Jinfu Shu, Junyue Wang, Stanislav Sinogeikin, Yue Meng, Vitali B. Prakapenka, Eran Greenberg, Ruqing Xu, Xianrong Huang, Yang Ding, Alexander Soldatov, Wenge Yang, Guoyin Shen, Wendy L. Mao, Ho-Kwang Mao
Publikováno v:
Matter and Radiation at Extremes, Vol 5, Iss 3, Pp 038401-038401-15 (2020)
Diamond anvil cell techniques have been improved to allow access to the multimegabar ultrahigh-pressure region for exploring novel phenomena in condensed matter. However, the only way to determine crystal structures of materials above 100 GPa, namely
Externí odkaz:
https://doaj.org/article/1e502deeac054a348fb8652c788150b7
Publikováno v:
Crystals, Vol 8, Iss 7, p 289 (2018)
We conducted an in situ crystal structure analysis of ferroselite at non-ambient conditions. The aim is to provide a solid ground to further the understanding of the properties of this material in a broad range of conditions. Ferroselite, marcasite-t
Externí odkaz:
https://doaj.org/article/59617b0ae60e47c3be6bc4479fd094e7