Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Stanislav N. Knyzev"'
Autor:
Svetlana S. Kormilitsina, Elena V. Molodtsova, Stanislav N. Knyzev, Roman Yu. Kozlov, Dmitry A. Zavrazhin, Elena V. Zharikova, Yuri V. Syrov
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://doaj.org/article/67bf523b36b24853a97193a5a8f0976d
Autor:
Dmitry A. Zavrazhin, Yuri V. Syrov, Elena V. Zharikova, Svetlana S. Kormilitsina, Roman Yu. Kozlov, Stanislav N. Knyzev, Elena V. Molodtsova
Publikováno v:
Modern Electronic Materials 6(4): 147-153
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17a6f7de116e11759302171d3404778f
https://doi.org/10.3897/j.moem.6.4.64991
https://doi.org/10.3897/j.moem.6.4.64991