Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Stanislav N. Knyazev"'
Autor:
Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 2, Pp 69-76 (2023)
The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements ha
Externí odkaz:
https://doaj.org/article/e98927c2b96a4bb1bfe0caa90639289a
Autor:
Stanislav N. Knyazev, Aleksandr V. Kudrya, Nikita Yu. Komarovskiy, Yuri N. Parkhomenko, Elena V. Molodtsova, Vyacheslav V. Yushchuk
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 131-140 (2022)
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc
Externí odkaz:
https://doaj.org/article/2fa4a65b375b4430b0b0807ab90396ed
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://doaj.org/article/d83dbe80d4ea493e908cb205ef5436ff
Autor:
Aleksandr G. Belov, Irina B. Parfent'eva, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Tatyana G. Yugova
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
Modern Electronic Materials 7(3): 79-84
Modern Electronic Materials 7(3): 79-84
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a23f5c0477cad36c89a48e6f22b1dd0
https://zenodo.org/record/5751160
https://zenodo.org/record/5751160
Autor:
Aleksandr G. Belov, Tatyana G. Yugova, Stanislav N. Knyazev, Vladimir E. Kanevskii, Evgeniya I. Kladova
Publikováno v:
Modern Electronic Materials 6(3): 85-89
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfd87ce44c1392a28171577d6aa99d64
https://zenodo.org/record/4592820
https://zenodo.org/record/4592820