Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Stanev, Teodor K."'
Autor:
Nelson, Jovan, Stanev, Teodor K., Lebedev, Dmitry, LaMountain, Trevor, Gish, J. Tyler, Zeng, Hongfei, Shin, Hyeondeok, Heinonen, Olle, Watanabe, Kenji, Taniguchi, Takashi, Hersam, Mark C., Stern, Nathaniel P.
Publikováno v:
Physical Review B 107, 115304 (2023)
Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena.
Externí odkaz:
http://arxiv.org/abs/2212.05423
Autor:
Murthy, Akshay A., Ribet, Stephanie M., Stanev, Teodor K., Liu, Pufan, Watanabe, Kenji, Taniguchi, Takashi, Stern, Nathaniel P., Reis, Roberto dos, Dravid, Vinayak P.
In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with el
Externí odkaz:
http://arxiv.org/abs/2012.13842
Autor:
Murthy, Akshay A., Stanev, Teodor K., Reis, Roberto dos, Hao, Shiqiang, Wolverton, Chris, Stern, Nathaniel P., Dravid, Vinayak P.
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to
Externí odkaz:
http://arxiv.org/abs/1910.02879
Autor:
LaMountain, Trevor, Bergeron, Hadallia, Balla, Itamar, Stanev, Teodor K., Hersam, Mark C., Stern, Nathaniel P.
Publikováno v:
Phys. Rev. B 97, 045307 (2018)
The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark
Externí odkaz:
http://arxiv.org/abs/1710.09739
Autor:
Wang, Kuang-Chung, Stanev, Teodor K., Valencia, Daniel, Charles, James, Henning, Alex, Sangwan, Vinod K., Lahiri, Aritra, Mejia, Daniel, Sarangapani, Prasad, Povolotskyi, Michael, Afzalian, Aryan, Maassen, Jesse, Klimeck, Gerhard, Hersam, Mark C., Lauhon, Lincoln J., Stern, Nathaniel P., Kubis, Tillmann
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electro
Externí odkaz:
http://arxiv.org/abs/1703.02191
Publikováno v:
Nature Photonics, 11, 431-435 (2017)
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent superpositions o
Externí odkaz:
http://arxiv.org/abs/1701.05579
Publikováno v:
2D Materials 4, 021012 (2017)
Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dep
Externí odkaz:
http://arxiv.org/abs/1612.03921
Autor:
Wei, Guohua, Czaplewski, David A., Lenferink, Erik J., Stanev, Teodor K., Jung, Il Woong, Stern, Nathaniel P.
Publikováno v:
Scientific Reports 7, Article number: 3324 (2017)
Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-elec
Externí odkaz:
http://arxiv.org/abs/1510.09135
Publikováno v:
Appl. Phys. Lett. 107, 091112 (2015)
We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements
Externí odkaz:
http://arxiv.org/abs/1506.02015
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.