Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Standke, Yvonne"'
Autor:
Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Vogel, Norman, Hauschildt, Meike, Beyer, Armand, Engelmann, Hans-Jürgen, Zschech, Ehrenfried
Publikováno v:
In Microelectronic Engineering 2 April 2015 137:47-53
Autor:
Liao, Zhongquan, Standke, Yvonne, Gluch, Jürgen, Balazsi, Katalin, Pathak, Onkar, Höhn, Sören, Herrmann, Mathias, Werner, Stephan, Dusza, Jan, Balazsi, Csaba, Zschech, Ehrenfried
Silicon nitride-zirconia-graphene composites with high graphene content (5 wt% and 30 wt%) were sintered by gas pressure sintering (GPS). The effect of the multilayer graphene (MLG) content on microstructure and fracture mechanism is investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::27d1445f3e7d8150fd4e08c2c7a7a083
https://publica.fraunhofer.de/handle/publica/266104
https://publica.fraunhofer.de/handle/publica/266104
Akademický článek
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Autor:
Zschech, Ehrenfried, Löffler, Markus, Krüger, Peter, Gluch, Jürgen, Kutukova, Kristina, Zglobicka, Izabela, Silomon, Jendrik, Rosenkranz, Rüdiger, Standke, Yvonne, Topal, E.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::d919187128f480d2fee2d38247d11126
https://publica.fraunhofer.de/handle/publica/253962
https://publica.fraunhofer.de/handle/publica/253962
Autor:
Garitagoitia, Maria Aranzazu, Rosenkranz, Rüdiger, Löffler, M., Clausner, André, Standke, Yvonne, Zschech, Ehrenfried
A novel method to quantify and predict the material contrast using Backscattered Electron (BSE) imaging in Scanning Electron Microscopy (SEM) is presented while using low primary electron beam energies (Ep). In this study, the parameters for BSE imag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::0d863dbe38c7ae9cf26c357c450321d2
https://publica.fraunhofer.de/handle/publica/254183
https://publica.fraunhofer.de/handle/publica/254183
Autor:
Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Clausner, André, Mühle, Uwe, Gluch, Jürgen, Standke, Yvonne, Aubel, Oliver, Beyer, Armand, Hauschildt, Meike, Zschech, Ehrenfried
The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. The aggressive scaling of feature sizes, both on devices and interconnects, leads to serious cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::a8ffcca5cf201351f0e0275696149767
https://publica.fraunhofer.de/handle/publica/240933
https://publica.fraunhofer.de/handle/publica/240933
Autor:
Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Aubel, Oliver, Mühle, Uwe, Gluch, Jürgen, Niese, Sven, Standke, Yvonne, Rosenkranz, Rüdiger, Löffler, Markus, Vogel, Norman, Beyer, Armand, Engelmann, Hans Jürgen, Guttmann, Peter, Schneider, Gerhard, Zschech, Ehrenfried
The time dependent dielectric breakdown (TDDB) in copper/ultra-low-k on-chip interconnect stacks of integrated circuits has become one of the most critical reliability concerns in recent years. In this paper, a novel experimental in situ microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::3fd2c7e635a485e6011f5f4eb4361285
https://publica.fraunhofer.de/handle/publica/236159
https://publica.fraunhofer.de/handle/publica/236159
Autor:
Zschech, Ehrenfried, Liao, Zhongquan, Gall, Martin, Yeap, Kong Boon, Sander, Christoph, Aubel, Oliver, Mühle, Uwe, Gluch, Jürgen, Niese, Sven, Standke, Yvonne, Rosenkranz, Rüdiger, Löffler, Markus, Vogel, Norman, Beyer, Armand, Engelmann, Hans‐Jürgen, Guttmann, Peter, Schneider, Gerd
Publikováno v:
Advanced Engineering Materials; May2014, Vol. 16 Issue 5, p486-493, 8p
Autor:
Kutukova, Kristina, Liao, Zhongquan, Werner, Stephan, Guttmann, Peter, Standke, Yvonne, Gluch, Jurgen, Schneider, Gerd, Zschech, Ehrenfried
Publikováno v:
Microscopy & Microanalysis; 2018 Supplement2, Vol. 24, p438-439, 2p