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Autor:
Strand, Frode S., Cooil, Simon P., Campbell, Quinn T., Flounders, John J., Røst, Håkon I., Åsland, Anna Cecilie, Skarpeid, Alv Johan, Stalsberg, Marte P., Hu, Jinbang, Bakkelund, Johannes, Bjelland, Victoria, Preobrajenski, Alexei B., Li, Zheshen, Bianchi, Marco, Miwa, Jill A., Wells, Justin W.
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $\delta$-layers. We show that, in spite of the known challenges in producing highly confined Sb $\delta$-layers, sufficient confinement is
Externí odkaz:
http://arxiv.org/abs/2410.17387