Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Stahr, F."'
Autor:
Strobel, C., Leszczynski, S., Albert, M., Bartha, J.W., Mikolajick, T., Stahr, F., Röhlecke, S., Steinke, O.
8th World Conference on Photovoltaic Energy Conversion; 123-127
Various amorphous silicon (a-Si:H) deposition methods for heterojunction solar cells were investigated regarding their suitability for effective wafer passivation and high solar cel
Various amorphous silicon (a-Si:H) deposition methods for heterojunction solar cells were investigated regarding their suitability for effective wafer passivation and high solar cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb121ff1c37ab5ab333f9e6fdf53889b
38th European Photovoltaic Solar Energy Conference and Exhibition; 358-362
The catalytic chemical vapor deposition technology (CAT-CVD), also called Hot-Wire CVD (HW- CVD), is a commonly used technique for the production of various thin-film mat
The catalytic chemical vapor deposition technology (CAT-CVD), also called Hot-Wire CVD (HW- CVD), is a commonly used technique for the production of various thin-film mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385664a9ed4c8ddffce6497e631cdada
Autor:
Leszczynski, S., Leszczynska, B., Strobel, C., Albert, M., Stahr, F., Kuske, J., Bartha, J.W.
37th European Photovoltaic Solar Energy Conference and Exhibition; 290-294
The main invention in this work is an application of HW-CVD and PECVD technique in one dynamic deposition system, utilizing the advantages of both methods. The focus here
The main invention in this work is an application of HW-CVD and PECVD technique in one dynamic deposition system, utilizing the advantages of both methods. The focus here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae8873a6b862e65e15f3e33072580c2
Publikováno v:
In Thin Solid Films 2006 502(1):59-62
Autor:
Schade, K., Stahr, F., Röhlecke, S., Steinke, O., Richter, R.H., Schopper, F., Heinzinger, K., Hartung, J.
Publikováno v:
In Surface & Coatings Technology 1 October 2005 200(1-4):364-367
Publikováno v:
In Surface & Coatings Technology 1 October 2005 200(1-4):490-493
Autor:
Leszczynski, S., Strobel, C., Leszczynska, B., Albert, M., Stahr, F., Kuske, J., Bartha, J.W.
36th European Photovoltaic Solar Energy Conference and Exhibition; 533-537
In this study a first direct comparison of three fabrication methods for high-rate fabrication of amorphous silicon (a-Si:H) in the same deposition system will be carried
In this study a first direct comparison of three fabrication methods for high-rate fabrication of amorphous silicon (a-Si:H) in the same deposition system will be carried
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb00e231dbe426000ee76f979b2d737d
Autor:
Leszczynski, S., Strobel, C., Leszczynska, B., Albert, M., Stahr, F., Kuske, J., Bartha, J.W.
35th European Photovoltaic Solar Energy Conference and Exhibition; 672-675
In this study, the properties of the intrinsic amorphous silicon (a-Si:H) and p-doped microcrystalline silicon (μc-Si:H) materials were investigated in a wide range of t
In this study, the properties of the intrinsic amorphous silicon (a-Si:H) and p-doped microcrystalline silicon (μc-Si:H) materials were investigated in a wide range of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a0be1fcc69eb9df3605105cb911dbf
Autor:
Leszczynska, B., Strobel, C., Leszczynski, S., Albert, M., Stahr, F., Kuske, J., Bartha, J.W.
35th European Photovoltaic Solar Energy Conference and Exhibition; 665-667
The plasma enhanced chemical vapor deposition (PECVD) process is used for the deposition of thin-film silicon. By varying the deposition conditions, it is possible to pro
The plasma enhanced chemical vapor deposition (PECVD) process is used for the deposition of thin-film silicon. By varying the deposition conditions, it is possible to pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78646e67f42198a1a51149023987f748
Autor:
Strobel, C., Leszczynska, B., Leszczynski, S., Albert, M., Stahr, F., Kuske, J., Bartha, J.W.
33rd European Photovoltaic Solar Energy Conference and Exhibition; 745-748
Intrinsic hydrogenated amorphous silicon layers (a-Si:H) for heterojunction solar cells with intrinsic thin layers (HIT) are deposited by means of radio frequency (RF) an
Intrinsic hydrogenated amorphous silicon layers (a-Si:H) for heterojunction solar cells with intrinsic thin layers (HIT) are deposited by means of radio frequency (RF) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::211b38e7e6700204c0c9287fc12b6899