Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Staffan Norrga"'
Publikováno v:
IEEE Access, Vol 12, Pp 23514-23528 (2024)
Grid-forming converters can emulate the behavior of a synchronous generator through frequency droop control. The stability of grid-forming modular multilevel converters can be studied via the impedance-based stability criterion. This paper presents a
Externí odkaz:
https://doaj.org/article/818bdd69b7cf48fb88db79445846be49
Publikováno v:
Energies, Vol 17, Iss 11, p 2557 (2024)
Silicon carbide (SiC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs) hold promising application prospects in future high-capacity high-power converters due to their excellent electrothermal characteristics. However, as nascent
Externí odkaz:
https://doaj.org/article/ded2d20277054eb486231129e12a26f0
Publikováno v:
IEEE Access, Vol 10, Pp 38189-38201 (2022)
The wireless control of modular multilevel converter (MMC) submodules was recently proposed. The success of the control depends on specialized control methods suitable for wireless communication and a properly designed wireless communication network
Externí odkaz:
https://doaj.org/article/5ed8d18ee6a64677acde08566d375889
Autor:
Ilka Jahn, Mehrdad Nahalparvari, Carolin Hirsching, Melanie Hoffmann, Patrick Dullmann, Fisnik Loku, Adedotun Agbemuko, Geraint Chaffey, Eduardo Prieto-Araujo, Staffan Norrga
Publikováno v:
IEEE Access, Vol 10, Pp 13555-13569 (2022)
High voltage direct current (HVDC) grids are envisioned for large-scale grid integration of renewable energy sources. Upon realization, components from multiple vendors have to be coordinated and interoperability problems can occur. To address these
Externí odkaz:
https://doaj.org/article/60a506247a2245a8a54d78483e08ee3c
Autor:
Antoine Baudoin, Bence Hátsági, Miguel Álvarez, Lennart Ängquist, Simon Nee, Staffan Norrga, Tomas Modeer
Publikováno v:
The Journal of Engineering (2019)
Recent developments in high-voltage direct current transmission technology and the plans for multi-terminals motivate research efforts on the fast DC breaker. A novel concept to interrupt current up to several kiloamperes within a few milliseconds is
Externí odkaz:
https://doaj.org/article/01826b6bd3cf4a5aafd9718f08e71197
Publikováno v:
2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68350624047d979d644901d0e63f08b6
https://doi.org/10.1109/eurosime56861.2023.10100764
https://doi.org/10.1109/eurosime56861.2023.10100764
Publikováno v:
IEEE Transactions on Power Electronics. 37:4133-4147
Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-Off Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c59b20f4cb50ef1584693a7076693fe
https://doi.org/10.1109/tpel.2021.3122988
https://doi.org/10.1109/tpel.2021.3122988
Publikováno v:
IEEE Transactions on Power Electronics. 36:8887-8906
Recent advancements in silicon carbide (SiC) powersemiconductor technology enable developments in the high-powersector, e.g., high-voltage direct current (HVdc) converters fortransmission, where today silicon (Si) devices are state-of-the-art. New su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840191fc31c8bcc34f241f20bc2aad8a
https://doi.org/10.1109/tpel.2021.3049320
https://doi.org/10.1109/tpel.2021.3049320
Publikováno v:
IEEE Transactions on Power Electronics. 36:5874-5891
The performance of theoretical ultrahigh-voltage power semiconductor devices has been predicted by means of numerical simulations using the Sentaurus technology computer-aided design tool. A general silicon carbide punch-through insulated-gate bipola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d691a64c6f6dffd16486d73c40e6b432
https://doi.org/10.1109/tpel.2020.3027370
https://doi.org/10.1109/tpel.2020.3027370
Autor:
Panagiotis Bakas, Yuhei Okazaki, Hans-Peter Nee, Staffan Norrga, Kalle Ilves, Lennart Harnefors
Publikováno v:
IEEE Transactions on Power Electronics. 35:12909-12928
This article studies a new hybrid converter that utilizes thyristors and full-bridge (FB) arms for achieving high-power capability with reduced semiconductor power rating compared to the FB modular multilevel converter. The study covers the theoretic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b110f507cee0e90c006a7dda82683aa
https://doi.org/10.1109/tpel.2020.2996568
https://doi.org/10.1109/tpel.2020.2996568