Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Staffan Hellstrom"'
Publikováno v:
IEEE Journal of Photovoltaics. 4:1079-1085
The effects of delta-doping InAs quantum-dot (QD)-enhanced GaAs solar cells were studied both through modeling and device experimentation. Delta doping of two, four, and eight electrons per QD, as well as nine holes per QD, was used in this study. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7bd00d92db55fe59cbbf837e239b0c
https://doi.org/10.1109/jphotov.2014.2316677
https://doi.org/10.1109/jphotov.2014.2316677
Growth of InAs quantum dots in a metamorphic InGaAs bottom cell of an inverse metamorphic solar cell
Autor:
George T. Nelson, Seth M. Hubbard, Staffan Hellstrom, Andree Wibowo, Brittany L. Smith, Rao Tatavarti, Michael A. Slocum
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
State-of-the-art triple junction inverse metamorphic solar cells have been known to have bottom InGaAs junction that are limiting to the overall radiation performance. It has been proposed that the addition of quantum dots to the bottom junction woul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73529325b5792f308aea982caefdeadb
https://doi.org/10.1109/pvsc.2016.7750005
https://doi.org/10.1109/pvsc.2016.7750005
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The confinement depth of bound states in InAs quantum dots was studied as a function of QD doping. k·p simulation predicted a decrease of up to 50 meV in absolute confinement depth as QDs are doped due to local band bending from QD charging. Photore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1491bfc8c7f5965941bb77d08dac6f1
https://doi.org/10.1109/pvsc.2014.6925104
https://doi.org/10.1109/pvsc.2014.6925104
Autor:
Randy J. Ellingson, Staffan Hellstrom, Yushuai Dai, Seth M. Hubbard, David V. Forbes, Kristina Driscoll, Stephen J. Polly, Paul J. Roland
Publikováno v:
SPIE Proceedings.
The effects of electric field on carrier escape in InAs/GaAs quantum dots embedded in a p-i-n solar cell structures have been studied by quantum efficiency. Via band structure simulation, effective barrier height of carriers inside QDs is reduced wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f56fe3e7ec0b9ea79b86bacf9148d4
https://doi.org/10.1117/12.2040153
https://doi.org/10.1117/12.2040153