Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Staf Verhaegen"'
Autor:
Alessandro Vaglio Pret, Vincent Wiaux, Staf Verhaegen, Nadia Vandenbroeck, Patrick Wong, Roel Gronheid
Publikováno v:
Journal of Photopolymer Science and Technology. 23:185-191
Various material approaches for more cost-effective double patterning have been proposed during the past few years. Resolution capabilities of these approaches using dipole illumination are documented in literature. In this paper it is investigated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8a7672d523f92c85a61bd8fe6c4ab06
https://doi.org/10.2494/photopolymer.23.185
https://doi.org/10.2494/photopolymer.23.185
Autor:
Staf Verhaegen, Mireille Maenhoudt, Vincent Wiaux, Sang Uhk Rhie, Lawrence S. Melvin, Brian Ward, Kevin Lucas, Hua Song
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2434-2440
Double patterning is a manufacturing process targeted for the 22nm half pitch manufacturing node that harbors strong potential for reaching high volume manufacturing. The double patterning process requires twice as many manufacturing steps for a devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae576eb04ba536f952656d7ec48a4ac7
https://doi.org/10.1116/1.3021377
https://doi.org/10.1116/1.3021377
Autor:
Monique Ercken, Janko Versluijs, Staf Verhaegen, Mircea Dusa, Vincent Truffert, Johan De Backer, Tom Vandeweyer
Publikováno v:
SPIE Proceedings.
Today, 22nm node devices are built using 193nm immersion lithography, possibly combined with double patterning techniques. Some stretch till the 16nm node is feasible here, using double, triple or even quadruple patterning. Alternatively, extreme ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7ebd0b74b8d9ba055e13287e3f1b6e
https://doi.org/10.1117/12.881690
https://doi.org/10.1117/12.881690
Publikováno v:
SPIE Proceedings.
Over the last couple of years a lot of attention has gone to the development of new Litho-Process-Litho-Etch (LPLE) double patterning process alternatives to Litho-Etch-Litho-Etch (LELE) or Spacer-Defined Double Patterning (SDDP)[3,5,6]. Much progres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e37cfddd13efeb912d54d5447d566b
https://doi.org/10.1117/12.846998
https://doi.org/10.1117/12.846998
Autor:
Christoph Hennerkes, Joerg Zimmermann, Mircea Dusa, Robert John Socha, Joost Bekaert, Stanislas Baron, Darko Trivkovic, Anita Bouma, E. van der Heijden, L. Van Look, Kram Koen Schreel, Paul Gräupner, Hua-yu Liu, Frederic Lazzarino, Stephen Hsu, K. Ning, Bart Laenens, Melchior Mulder, J. T. Neumann, Min-Chun Tsai, Orion Mouraille, P. van Adrichem, Geert Vandenberghe, Staf Verhaegen, Jozef Maria Finders
Publikováno v:
SPIE Proceedings.
The use of customized illumination modes is part of the pursuit to stretch the applicability of immersion ArF lithography. Indeed, a specific illumination source shape that is optimized for a particular design leads to enhanced imaging results. Recen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198b332a92a697d480e57358a4e3ff63
https://doi.org/10.1117/12.846918
https://doi.org/10.1117/12.846918
Publikováno v:
SPIE Proceedings.
In current and next generation nodes lithography is pushed to low k1 lithography imaging regimes. A gridded design approach with lines and cuts has previously been shown to allow optimizing illuminator conditions for critical layers in logic designs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17bd657d9e296f367893a4d5a68cc48f
https://doi.org/10.1117/12.846595
https://doi.org/10.1117/12.846595
Autor:
A. Van Dijk, Hans Meiling, M. Demand, Anne-Marie Goethals, Olivier Richard, Nancy Heylen, Mircea Dusa, Jan Hermans, Philippe Absil, Staf Verhaegen, R. Schreutelkamp, Michal Rakowski, G. Beyer, Steven Demuynck, Serge Biesemans, J. De Backer, Tom Vandeweyer, Harold Dekkers, Kavita Shah, Herbert Struyf, Andriy Hikavyy, F. Van Roey, Frederic Lazzarino, Geert Vandenberghe, C. Pigneret, C. Vrancken, C. Baerts, A. Cockburn, Patrick Ong, T. Y. Hoffmann, R. Rajagopalan, Jerry Gelatos, Bart Baudemprez, Hugo Bender, Henny Volders, Kurt G. Ronse, Monique Ercken, S. Brus, A. De Keersgieter, Virginie Gravey, Bas Hultermans, S. Locorotondo, Anabela Veloso, K. Kellens, L. Romijn, C. Huffman, Christie Delvaux, E. Altamirano, D. Goossens, Sjoerd Lok
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
We demonstrate electrically functional 0.099µm2 6T-SRAM cells using full-field EUV lithography for contact and M1 levels. This enables formation of dense arrays without requiring any OPC/RET, while exhibiting substantial process latitudes & potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15fef4a75db1a9ae02381442fc12ebe
https://doi.org/10.1109/iedm.2009.5424365
https://doi.org/10.1109/iedm.2009.5424365
Autor:
Vincent Truffert, Tom Vandeweyer, Janko Versluijs, Staf Verhaegen, Patrick Wong, Andy Miller, Vincent Wiaux, Geert Vandenberghe, Monique Ercken, Joost Bekaert, Roel Gronheid, Mireille Maenhoudt
Publikováno v:
SPIE Proceedings.
Several options are being explored to extend device scaling towards and beyond the 32nm Half Pitch (HP) using the current immersion lithography tools and this in order to compete with the costly EUV technology that is still under development. These e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48054c9aceefa5918d41e677c3abdd89
https://doi.org/10.1117/12.854658
https://doi.org/10.1117/12.854658
Autor:
Staf Verhaegen, Mireille Maenhoudt, Fumio Iwamoto, Sergei V. Postnikov, Takashi Matsuda, Geert Vandenberghe, Vincent Wiaux
Publikováno v:
SPIE Proceedings.
Double Patterning allows to further extend the use of water immersion lithography at its maximum numerical aperture NA=1.35. Splitting of design layers to recombine through Double Patterning (DP) enables an effective resolution enhancement. Single po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96c61eec854f6348b4c4efc7d006bd3
https://doi.org/10.1117/12.804697
https://doi.org/10.1117/12.804697
Autor:
Vincent Wiaux, Petrisor Panaite, Staf Verhaegen, Gerard Luk-Pat, Mireille Maenhoudt, Kevin Lucas, Christopher Cork
Publikováno v:
Photomask Technology 2008.
For keeping pace with Moore's Law of reducing the feature sizes on integrated circuits, the driving forces have been reductions in the exposure-tool wavelength, and increases in the lens numerical aperture (NA). With extreme ultra-violet (EUV) lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee18de0b9b9e002abad134503ed68bd
https://doi.org/10.1117/12.801545
https://doi.org/10.1117/12.801545