Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Stadnyk, Yu V."'
Autor:
Romaka, L. P., Stadnyk, Yu. V., Romaka, V. A., Нoryn, A. M., Romaniv, I. M., Krayovskyy, V. Ya., Dubelt, S. P.
Publikováno v:
Physics and Chemistry of Solid State; Vol 20, No 3 (2019); 275-281
Фізика і хімія твердого тіла; Vol 20, No 3 (2019); 275-281
Фізика і хімія твердого тіла; Vol 20, No 3 (2019); 275-281
The samples of ZrNi1-хVxSn solid solution (x = 0–0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics o
Publikováno v:
Physics and Chemistry of Solid State; Vol 19, No 1 (2018); 60-65
Фізика і хімія твердого тіла; Vol 19, No 1 (2018); 60-65
Фізика і хімія твердого тіла; Vol 19, No 1 (2018); 60-65
The interaction of the components in the Gd-Mn-Sn ternary system was studied using the methods of X-ray and microstructure analyses, in the whole concentration range. The phase diagrams of the Gd-Mn-Sn system were constructed at 873 and 673 K. At bot
Features of Structural, Electrokinetic and Energy State Characteristics of Vx+yCo1-ySb3 Skutterudite
Publikováno v:
Physics and Chemistry of Solid State; Vol 18, No 3 (2017); 328-333
Фізика і хімія твердого тіла; Vol 18, No 3 (2017); 328-333
Фізика і хімія твердого тіла; Vol 18, No 3 (2017); 328-333
The structure characteristics, temperature and concentration dependences of the electrical resistivity and the thermopower coefficient for the Vx+yCo1-ySb3 skutterudite were investigated in the ranges: T = 80 - 400 K, x = 0.02 - 0.20. It was shown th
Autor:
Romaka, L. P., Stadnyk, Yu. V., Romaka, V. A., Rogl, P. F., Krayovskyy, V. Ya., Рќoryn, A. M., Rykavets, Z.
Publikováno v:
Physics and Chemistry of Solid State; Vol 18, No 1 (2017); 41-48
Фізика і хімія твердого тіла; Vol 18, No 1 (2017); 41-48
Фізика і хімія твердого тіла; Vol 18, No 1 (2017); 41-48
Features of structural, electrokinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Рў = 80 - 400 K and С… = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn comp
Autor:
Romaka, L. P., Romaka, V. V., Stadnyk, Yu. V., Krayovskyy, V. Ya., Kaczorowski, D., Нoryn, A. M.
Publikováno v:
Physics and Chemistry of Solid State; Vol 17, No 1 (2016); 37-42
Фізика і хімія твердого тіла; Vol 17, No 1 (2016); 37-42
Фізика і хімія твердого тіла; Vol 17, No 1 (2016); 37-42
The features of structural, energy state and kinetic characteristics of the p-GdNiSb and p-LuNiSb semiconductors were investigated in the temperature range T = 4.2-400 K. As example, in p-LuNiSb, the generating of structural acceptor defects as a res
Publikováno v:
Physics and Chemistry of Solid State; Vol 17, No 4 (2016); 552-558
Фізика і хімія твердого тіла; Vol 17, No 4 (2016); 552-558
Фізика і хімія твердого тіла; Vol 17, No 4 (2016); 552-558
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1-xErxNiSn solid solution in the range: T = 80 – 400 K, x = 0 - 0.10. It was confirmed partly disorder crystal structure of HfNiSn compound as a res
Autor:
Romaka, L. P., Romaka, V. V., Krayovskyy, V. Ya., Stadnyk, Yu. V., Rogl, P. -F., Нoryn, A. M.
Publikováno v:
Physics and Chemistry of Solid State; Vol 17, No 2 (2016); 212-221
Фізика і хімія твердого тіла; Vol 17, No 2 (2016); 212-221
Фізика і хімія твердого тіла; Vol 17, No 2 (2016); 212-221
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a resul
Autor:
Stadnyk, Yu. V.1 stadnyk_yuriy@franko.lviv.ua, Romaka, L. P.1, Hlil, E. K.2, Romaka, V. V.3, Horyn, A. M.1, Krayovskyy, V. Ya.3
Publikováno v:
Journal of Physical Studies. 2012, Vol. 16 Issue 3, p3704-1-3704-8. 8p.
Autor:
Stadnyk, Yu. V.1, Goryn', A. M.1, Gorelenko, Yu. K.1 gorelenkoyuriy@franko.lviv.ua, Romaka, L. P.1, Mel'nichenko, N. A.1
Publikováno v:
Inorganic Materials. Aug2010, Vol. 46 Issue 8, p842-846. 5p. 1 Chart, 3 Graphs.
Autor:
Romaka, V. A.1,2 vromaka@polynet.lviv.ua, Stadnyk, Yu. V.3, Fruchart, D.4, Dominuk, T. I.2, Romaka, L. P.3, Rogl, P.5, Goryn, A. M.3
Publikováno v:
Semiconductors. Sep2009, Vol. 43 Issue 9, p1124-1130. 7p. 6 Graphs.