Zobrazeno 1 - 10
of 8 812
pro vyhledávání: '"Stach A"'
Autor:
Twamley SG, Gimber N, Sánchez-Ibarra HE, Christaller T, Isakzai V, Kratz H, Mitra R, Kampen L, Stach A, Heilmann H, Söhl-Kielczynski B, Ebong EE, Schmoranzer J, Münster-Wandowski A, Ludwig A
Publikováno v:
International Journal of Nanomedicine, Vol Volume 19, Pp 3123-3142 (2024)
Shailey Gale Twamley,1– 3 Niclas Gimber,4 Héctor Eduardo Sánchez-Ibarra,1,2 Tobias Christaller,1,2 Victoria Isakzai,1,2 Harald Kratz,5 Ronodeep Mitra,6 Lena Kampen,1– 3 Anke Stach,1,2 Heike Heilmann,7 Berit Söhl-Kielczynski,8 Eno Essien Ebong,
Externí odkaz:
https://doaj.org/article/5765af8c32d94bb68025b1efdb39fa53
Autor:
Kuijpers, Stach E. J., van Roij, André J. A., Sweers, Edwin, Herbers, Sven, Caris, Youp M., van de Meerakker, Sebastiaan Y. T.
In low-energy collisions between two dipolar molecules, the long-range dipole-dipole interaction plays an important role in the scattering dynamics. Merged beam configurations offer the lowest collision energies achievable, but they generally can not
Externí odkaz:
http://arxiv.org/abs/2408.13009
Autor:
Lin, Da, Lynch, Jason, Wang, Sudong, Hu, Zekun, Rai, Rajeev Kumar, Zhang, Huairuo, Chen, Chen, Kumari, Shalini, Stach, Eric, Davydov, Albert V., Redwing, Joan M., Jariwala, Deep
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absor
Externí odkaz:
http://arxiv.org/abs/2407.05170
Autor:
Izhar, Fiagbenu, M. M. A., Yao, S., Du, X., Musavigharavi, P., Deng, Y., Leathersich, J., Moe, C., Kochhar, A., Stach, E. A., Vetury, R., Olsson III, R. H.
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quali
Externí odkaz:
http://arxiv.org/abs/2406.15431
Autor:
Kim, Kwan-Ho, Han, Zirun, Zhang, Yinuo, Musavigharavi, Pariasadat, Zheng, Jeffrey, Pradhan, Dhiren K., Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack,
Externí odkaz:
http://arxiv.org/abs/2403.12361
Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Autor:
Laxmeesha, Prajwal M., Tucker, Tessa D., Rai, Rajeev Kumar, Li, Shuchen, Yoo, Myoung-Woo, Stach, Eric A., Hoffmann, Axel, May, Steven J.
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploi
Externí odkaz:
http://arxiv.org/abs/2401.11662
Autor:
Fraccaroli, Enrico, Jang, Seongik, Stach, Logan, Yang, Hoeseok, Park, Sangyoung, Chakraborty, Samarjit
Due to manufacturing variabilities and temperature gradients within an electric vehicle's battery pack, the capacities of cells in it decrease differently over time. This reduces the usable capacity of the battery - the charge levels of one or more c
Externí odkaz:
http://arxiv.org/abs/2401.03124
Autor:
Choi, Bongjun, Jo, Kiyoung, Rahaman, Mahfujur, Alfieri, Adam, Lynch, Jason, Pribil, Greg K., Koh, Hyeongjun, Stach, Eric A., Jariwala, Deep
Optical anisotropy is a fundamental attribute of some crystalline materials and is quantified via birefringence. A birefringent crystal not only gives rise to asymmetrical light propagation but also attenuation along two distinct polarizations, a phe
Externí odkaz:
http://arxiv.org/abs/2401.00590
Autor:
Singh, Simrjit, Kim, Kwan-Ho, Jo, Kiyoung, Musavigharavi, Pariasadat, Kim, Bumho, Zheng, Jeffrey, Trainor, Nicholas, Chen, Chen, Redwing, Joan M., Stach, Eric A, Olsson III, Roy H, Jariwala, Deep
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials
Externí odkaz:
http://arxiv.org/abs/2311.08275
Autor:
Pradhan, Dhiren K., Moore, David C., Kim, Gwangwoo, He, Yunfei, Musavigharavi, Pariasadat, Kim, Kwan-Ho, Sharma, Nishant, Han, Zirun, Du, Xingyu, Puli, Venkata S., Stach, Eric A., Kennedy, W. Joshua, Glavin, Nicholas R., Olsson III, Roy H., Jariwala, Deep
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerg
Externí odkaz:
http://arxiv.org/abs/2309.04555