Zobrazeno 1 - 10
of 34
pro vyhledávání: '"St. Trellenkamp"'
Autor:
St. Trellenkamp, Hilde Hardtdegen, A. Winden, J. Moers, Dagmar Gregušová, Martin Mikulics, Peter Kordos, Joachim Mayer, Zdeněk Sofer
Publikováno v:
Applied physics letters 118(4), 043101-(2021). doi:10.1063/5.0038070
A local so-called laser-micro-annealing (LMA) conditioning technology, which is suitable for the fabrication of a large range of hybrid nano-optoelectronic devices, was applied to III-nitride-based nano-light emitting diodes (LEDs). The LEDs with a d
Autor:
St. Trellenkamp, Sebastian Heedt, Jürgen Schubert, François Crépin, Th. Schäpers, N. Traverso Ziani, Bjoern Trauzettel, Werner Prost, Detlev Grützmacher
Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83a5a5afc7e230c32a31ed2b0fed7ded
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Autor:
Martin Mikulics, St. Trellenkamp, Detlev Grützmacher, A. Winden, Hilde Hardtdegen, Hans Lüth, Zdeněk Sofer, M. Marso
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
Nano-LEDs based on mesoscopic structures are the key elements for future energy saving nano-opto-electronics as well as for fast and highly secure optical communication. We present first results using a vertical device layout in which nano-LED emitte
Autor:
Hilde Hardtdegen, St. Trellenkamp, J. Moers, Detlev Grützmacher, M. Marso, Zdeněk Sofer, Martin Mikulics
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
The development of two different dry etching approaches — ion beam etching (IBE) and reactive ion etching (RIE) — is reported for the fabrication of nano-LEDs as UV sources. The IBE approach leads to nano-LEDs with higher emission intensity but w
Autor:
Takashi Taniguchi, St. Trellenkamp, Christian Volk, Christoph Stampfer, S. Engels, A. Epping, Kenji Watanabe
Publikováno v:
physica status solidi (b). 250:2692-2696
We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvem
Publikováno v:
Thin Solid Films. 518:2565-2568
To maintain the development of MOSFET devices in the last three decades the lateral layout of this important device was scaled down into the sub-50 nm range. The challenge to maintain device performance was met by applying to scaling rules, which ens
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Publikováno v:
Microelectronic Engineering. :376-380
Some of the main problems associated with downscaling of devices are short channel effects and lithography limitations. The double gate concept is known to improve short channel behaviour of MOSFETs. One vertical double gate MOSFET concept requires f
Autor:
A. van der Hart, St. Trellenkamp, M. Marso, Peter Kordos, S. Mantl, S.M. Hogg, Hans Lüth, Michael Goryll, J. Moers
Publikováno v:
Microelectronic Engineering. 64:465-471
As scaling of electronic devices goes on, the issue of short channel effects draws growing attention. Double-gate MOSFETs are known to reduce short channel behaviour effectively [Proc. IEEE 85 (1997) 486] and therefore have gained increasing attentio
Publikováno v:
Applied Physics Letters
Applied physics letters 104(8), 083105 (2014). doi:10.1063/1.4866289
Applied physics letters 104(8), 083105 (2014). doi:10.1063/1.4866289
We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e21c30e542ebc1cd8586aef58dde6ee