Zobrazeno 1 - 10
of 45
pro vyhledávání: '"St. J. Dixon-Warren"'
Autor:
Fred Stanke, Oskar Amster, Yongliang Yang, St. J. Dixon-Warren, Benedict Drevniok, Stuart Friedman
Publikováno v:
Microelectronics Reliability. :214-217
Scanning microwave impedance microscopy (sMIM) is an emerging technique that has the potential to displace conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the profiling of dopan
Autor:
St. J. Dixon-Warren, Oskar Amster, Benedict Drevniok, Fred Stanke, Yongliang Yang, Stuart Friedman
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates
Publikováno v:
International Symposium for Testing and Failure Analysis.
Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions o
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 30:71-124
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators, and detectors are critical to the contemporary computing and communications infrastructure. These devices have been optimized for efficiency in power consump
Publikováno v:
Journal of Applied Physics. 95:3521-3526
A stack of nickel/germanium/gold metal layers was deposited sequentially to form the n-ohmic contact as part of the fabrication of an indium phosphide-based infrared photodetector product. Concave circles with a cone at the center were observed under
Autor:
T. Bryskiewicz, R. P. Lu, D. Macquistan, B. Bryskiewicz, St. J. Dixon-Warren, S. Ingrey, G. Smith
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1752-1757
Scanning spreading resistance microscopy (SSRM) is a promising new tool for dopant profiling in semiconductor materials. We present the results of a SSRM study of the cross section of a metalorganic chemical vapor deposited grown optoelectronic struc
Publikováno v:
The Journal of Chemical Physics. 111:10670-10680
The adsorption and desorption of hydrogen sulfide on clean reconstructed Au{100}-(5×20) and sulfided gold, denoted by Au{100}-(1×1)-SH, has been studied with a combination of temperature programmed desorption (TPD), low energy electron diffraction
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2982-2986
A design for a simple gas doser, which incorporates a movable shutter, is presented. The operation of this doser is demonstrated using the dosing and subsequent temperature programmed desorption of butanethiol on Au{100}-(5×20). The sticking probabi
Publikováno v:
Scopus-Elsevier
The normal translational energy (Ei) and surface temperature (Ts) dependence of the initial D2 sticking probability (s0) on Pt{100} has been measured using molecular beam techniques. On the hex phase s0 is found to decrease sharply with Ei between 5
Publikováno v:
The Journal of Chemical Physics. 106:2012-2030
Using single-crystal adsorption calorimetry, heat data have been measured for the adsorption of oxygen on the three low-index planes of Ni at 300 K along with corresponding sticking probabilities. New data are presented with coadsorbed potassium on e