Zobrazeno 1 - 10
of 66
pro vyhledávání: '"St. G. Müller"'
Autor:
Robert Tyler Leonard, Adrian Powell, V. F. Tsvetkov, D.P. Malta, Joseph John Sumakeris, St. G. Müller, Jason Ronald Jenny, Albert A. Burk, M.F. Brady, C. H. Carter, H. McD. Hobgood
Publikováno v:
Superlattices and Microstructures. 40:195-200
We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk growth by the sublimation method has resulted in the commercial release of 100 mm n -type 4H-SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c586d84931671bbd88dd33ee18838dc
https://doi.org/10.1016/j.spmi.2006.09.029
https://doi.org/10.1016/j.spmi.2006.09.029
Autor:
D.P. Malta, Adrian Powell, C. H. Carter, St. G. Müller, H. McD. Hobgood, V. F. Tsvetkov, Scott Allen, John W. Palmour, Robert Tyler Leonard, M.F. Brady, Michael James Paisley, R.C. Glass, Jason Ronald Jenny, Joseph John Sumakeris, Mrinal K. Das
Publikováno v:
The European Physical Journal Applied Physics. 27:29-35
The current status of SiC bulk growth is reviewed, while specific attention is given to the effect of defects in SiC substrates and epitaxial layers on device performance and yield. The progress in SiC wafer quality is reflected in the achievement of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d26023719ac0619163916eab163d2bdf
https://doi.org/10.1051/epjap:2004085
https://doi.org/10.1051/epjap:2004085
Publikováno v:
Journal of Physics: Condensed Matter. 15:5207-5221
We present a combined experimental and theoretical investigation of the interface between a B2-type FeSi film and Si(111). Using an ultra-thin B2-FeSi film grown on Si(111), the interface is still reached by electrons, so quantitative low-energy elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53da6652c7373c92838022e561fadaba
https://doi.org/10.1088/0953-8984/15/30/303
https://doi.org/10.1088/0953-8984/15/30/303
Autor:
St. G. Müller, Adrian Powell, V. F. Tsvetkov, R.C. Glass, Hudson Mcdonald Hobgood, C. H. Carter, Jason Ronald Jenny
Publikováno v:
Scopus-Elsevier
The growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique. These semi-insulating (SI) crystals (2-inch diameter) were produced without the intentional introduction of elemental d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae815722e80468675fc08bc4c1aab520
https://doi.org/10.1007/s11664-002-0084-9
https://doi.org/10.1007/s11664-002-0084-9
Autor:
H. McD. Hobgood, Mary Ellen Zvanut, V. V. Konovalov, Jason Ronald Jenny, V. F. Tsvetkov, St. G. Müller
Publikováno v:
Physica B: Condensed Matter. :671-674
An intrinsic defect (ID) has been identified in as-grown 4H–SiC by electron paramagnetic resonance (EPR). The EPR parameters of an ID measured in our nominally semi-insulating material are similar to the literature data of the EI5 defect produced i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1739155ab98be148b20696e4c32ea1a0
https://doi.org/10.1016/s0921-4526(01)00789-x
https://doi.org/10.1016/s0921-4526(01)00789-x
Autor:
Hudson Mcdonald Hobgood, Ranbir Singh, John W. Palmour, D.P. Malta, St. G. Müller, R.C. Glass, D. Henshall, Mark Brady, C. H. Carter, V. F. Tsvetkov
Publikováno v:
Materials Science and Engineering: B. 80:327-331
The production of large diameter, high quality SiC substrates is essential to realize the full potential of this important semiconductor material. The current status of SiC bulk sublimation growth for the production of these substrates is reviewed fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1bebb084597e411ac2b8b7039adfd1
https://doi.org/10.1016/s0921-5107(00)00658-9
https://doi.org/10.1016/s0921-5107(00)00658-9
Publikováno v:
Physical Review B. 62:5144-5149
The magnetic properties of ultrathin Co films and Co/Cu heterostructures grown on Cu(111) have been shown to improve when Pb is used as a surfactant: the thickness range of Co films displaying perpendicular magnetic anisotropy is extended and a compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f719b5bdbec8b00bead9f515cf735635
https://doi.org/10.1103/physrevb.62.5144
https://doi.org/10.1103/physrevb.62.5144
Publikováno v:
Surface Science. 458:155-161
Recent apparent discrepancies between results from low-energy electron and X-ray diffraction concerning a reduced in-plane lattice parameter of Cu(100) are resolved in favour of an uncontracted surface. We show that neglecting the energy dependence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e8998c976cc1be49b69befa64aa7a3
https://doi.org/10.1016/s0039-6028(00)00433-7
https://doi.org/10.1016/s0039-6028(00)00433-7
Autor:
Valeri F. Tsvetkov, H.M. Hobgood, M.F. Brady, D. Henshall, C.H. Carter, St. G. Müller, R.C. Glass, J.R Jenny, D. Malta
Publikováno v:
Journal of Crystal Growth. 211:325-332
Silicon-carbide-based device technology as well as the volume production of nitride-based, high brightness blue and green LEDs fabricated on SiC substrates has made tremendous progress within the last several years. The commercial availability of lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac9ae87d28d13b0f0402a7020d3e1f15
https://doi.org/10.1016/s0022-0248(99)00835-0
https://doi.org/10.1016/s0022-0248(99)00835-0
Publikováno v:
Journal of Physics: Condensed Matter. 11:9437-9454
Though correlations between surface structure and magnetism are evident, surface structure determinations of ultrathin magnetic films in the crystallographic sense are available only for a few cases. We investigate the three examples Ni/Cu(100), Co/C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2179361897350bbea58b2f457d37126d
https://doi.org/10.1088/0953-8984/11/48/307
https://doi.org/10.1088/0953-8984/11/48/307