Zobrazeno 1 - 10
of 13
pro vyhledávání: '"St. Frohnhoff"'
Publikováno v:
Journal of The Electrochemical Society. 142:615-620
Porous silicon formed by anodization of a p-type silicon substrate is characterized by a distribution of crystallites with diameters smaller than about 100 A. The corresponding size distributions obtained from Raman measurements show distinct peaks w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98cb3a0ddf2064719176d1277e6f76da
https://doi.org/10.1149/1.2044110
https://doi.org/10.1149/1.2044110
Publikováno v:
Thin Solid Films. 255:59-62
Porosity superlattices (SLs) are a new type of Si-based heterostructures which exhibit a periodical variation of the porosity in depth. These structures have been investigated by transmission electron microscopy. Different formation techniques for po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a898cd8e8770c7a0fb997b545d689f6f
https://doi.org/10.1016/0040-6090(94)05604-c
https://doi.org/10.1016/0040-6090(94)05604-c
Autor:
U. Frotscher, H. Münder, Wolfgang Richter, M. G. Berger, Markus Thönissen, St. Frohnhoff, U. Rossow
Publikováno v:
Thin Solid Films. 255:5-8
The influence of various parameters of the electrochemical process on the resulting microstructure of porous silicon layers was studied by spectroscopic ellipsometry. The first parameter, the etching time, is known to determine the layer thickness. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec3704fed31e826405c770c44b8ee01b
https://doi.org/10.1016/0040-6090(94)05676-5
https://doi.org/10.1016/0040-6090(94)05676-5
Autor:
M. Arntzen, T. Heinrich, Wolfgang Theiss, St. Frohnhoff, Jochen Fricke, Ruediger Arens-Fischer
Publikováno v:
Thin Solid Films. 255:115-118
Porous silicon (PS) has been formed by electrochemical etching of p-type silicon. During drying in air the sponge-like structure of the porous layers is exposed to capillary forces which will partially destroy the microstructure of highly PS. One pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4857ceb688a800a63c1f87c2888c94da
https://doi.org/10.1016/0040-6090(94)05634-p
https://doi.org/10.1016/0040-6090(94)05634-p
Publikováno v:
Porous Silicon Science and Technology ISBN: 9783540589365
Porous silicon has a manifold microscopic structure. Depending on the doping type and level of the substrate used for the anodization, pores with diameters up to 1 μm or down to a few nanometers can be formed [1]. Within this article the discussion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1587ec08fa91d7134df00f23a999e1
https://doi.org/10.1007/978-3-662-03120-9_21
https://doi.org/10.1007/978-3-662-03120-9_21
Autor:
H. Münder, Hans Lüth, K. Winz, Ruediger Arens-Fischer, C. Dieker, M. G. Berger, M. Arntzen, St. Frohnhoff, Wolfgang Theiss
Publikováno v:
MRS Proceedings. 358
Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattices were formed by periodically changing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b4c674b476c7cd9a3840914bf5a6bb
https://doi.org/10.1557/proc-358-327
https://doi.org/10.1557/proc-358-327
Autor:
Hans Lüth, Markus Thönissen, Michel Marso, St. Frohnhoff, H. Münder, Ruediger Arens-Fischer, M. G. Berger
Publikováno v:
MRS Proceedings. 358
The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185c04d0c26d3bc80a06ba951ca91c7c
https://doi.org/10.1557/proc-358-315
https://doi.org/10.1557/proc-358-315
Publikováno v:
Optical Properties of Low Dimensional Silicon Structures ISBN: 9789401049276
In the view of possible applications of porous Si layers in optoelectronic devices it is necessary to study the influence of microelectronic processing steps on the properties of porous Si films. Therefore, changes due to photolithography steps were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70dbd5f5434a173abad1da3ed6b66419
https://doi.org/10.1007/978-94-011-2092-0_9
https://doi.org/10.1007/978-94-011-2092-0_9
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