Výsledky vyhledávání - "Stéphane Biondo"

4H-SiC P+N UV Photodiodes for Space Applications

Autor: Laurent Ottaviani, B. Berenguier, Evgenia V. Kalinina, Frank Torregrosa, Frederic Milesi, Olivier Palais, Stéphane Biondo, A. Lyoussi, Mihai Lazar, A. A. Lebedev

Publikováno v: Materials Science Forum. :644-647

Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::28066c8f5035e8cd26de6535f6936248
https://doi.org/10.4028/www.scientific.net/msf.821-823.644

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4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Autor: M. A. El Khakani, V. Le Borgne, Mihai Lazar, Dominique Planson, Frank Torregrosa, Frederic Milesi, Wilfried Vervisch, Laurent Ottaviani, Julian Duchaine, Olivier Palais, Stéphane Biondo

Publikováno v: Materials Science Forum. :1203-1206

This paper presents a study of 4H-SiC UV photodetectors based on p+n thin junctions. Two kinds of p+ layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent anneali

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5489389a01be19d21cb745ebf3b9da6a
https://doi.org/10.4028/www.scientific.net/msf.717-720.1203

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Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

Autor: Stéphane Biondo, Laurent Ottaviani, Olivier Palais, Wilfried Vervisch

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2012, 111 (2), pp.024506. ⟨10.1063/1.3676284⟩
Journal of Applied Physics, 2012, 111 (2), pp.024506. ⟨10.1063/1.3676284⟩

This paper deals with the simulation of the reverse current density of 4H-SiC ultraviolet- (UV) photodetector devices based on p-i-n diodes. Simulations using the finite-element method presented in this paper lead to an understanding of the photodete

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee0f1702eb6024e54265c63137ace0fd
https://hal-amu.archives-ouvertes.fr/hal-03350206

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Optical-electrical simulation of organic solar cells: Influence of light trapping by photonic crystal and ZnO spacer on electrical characteristics

Autor: Guillaume Rivière, Philippe Torchio, Stéphane Biondo, Jean-Jacques Simon, Wilfried Vervisch, David Duché, Sylvain Vedraine, Ludovic Escoubas

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2012, 111, pp.094506. ⟨10.1063/1.4712292⟩
Journal of Applied Physics, American Institute of Physics, 2012, 111, pp.094506. ⟨10.1063/1.4712292⟩

International audience; This paper deals with organic solar cells (OSC) simulation using finite element method. Optical modeling is performed via finite difference time domain method whilst the continuity and Poisson's equations are solved to obtain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f97dc9e16049fe6c3a337898cd8d07c9
https://hal-unilim.archives-ouvertes.fr/hal-00911113

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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Autor: Olivier Palais, Frederic Milesi, Laurent Ottaviani, Michel Kazan, Blandine Courtois, Rachid Daineche, Frank Torregrosa, Stéphane Biondo, Julian Duchaine

Publikováno v: Advanced Materials Research
Advanced Materials Research, Trans Tech Publications, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
Advanced Materials Research, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩

International audience; This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a43a5118e2c9fdd375ed648cda4a361e
https://hal-amu.archives-ouvertes.fr/hal-03350220

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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Autor: Julian Duchaine, Mihai Lazar, Wilfried Vervisch, Rachid Daineche, Stéphane Biondo, Dominique Planson, Frederic Milesi, Laurent Ottaviani, Olivier Palais, Frank Torregrosa

Publikováno v: Proceedings of the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications
HeteroSiC & WASMPE 2011
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Materials Science Forum
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩

In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7daec684a092d6fbd07906f05d0ad3a
https://hal.archives-ouvertes.fr/hal-00661511

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Optical-electrical simulation of organic solar cells: excitonic modeling parameter influence on electrical characteristics

Autor: David Duché, Stéphane Biondo, Ludovic Escoubas, Jean-Jacques Simon, Guillaume Rivière, Wilfried Vervisch, Judikaël Le Rouzo, Philippe Torchio

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2011, 98 (25), ⟨10.1063/1.3582926⟩
Applied Physics Letters, 2011, 98 (25), ⟨10.1063/1.3582926⟩

International audience; This paper deals with Organic Solar Cells (OSCs) simulation using finite element method. Optical modeling is performed via Finite Difference Time Domain method whereas the continuity and Poisson’s equations are solved to obt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b11dff03c3684d03c12ce628761afcfb
https://hal-amu.archives-ouvertes.fr/hal-01757663/document

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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Autor: Olivier Palais, Stéphane Biondo, Laurent Ottaviani, Wilfried Vervisch

Publikováno v: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2011, 679-680, pp.563-566. ⟨10.4028/www.scientific.net/MSF.679-680.563⟩
Materials Science Forum, 2011, 679-680, pp.563-566. ⟨10.4028/www.scientific.net/MSF.679-680.563⟩

International audience; This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Fini

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61d439c9f437159d917e948fc8bd0908
https://hal-amu.archives-ouvertes.fr/hal-03350223

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Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

Autor: Laurent Ottaviani, Stéphane Biondo, Rachid Daineche, Olivier Palais, Frédéric Milesi, Julian Duchaine, Frank Torregrosa, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki

Publikováno v: AIP Conference Proceedings.

This paper focuses on the process giving rise to Nitrogen introduction into SiC p‐type epitaxial layers. Standard ion implantation and PULSION™ processes are performed at two distinct energies (700 eV and 7 keV), followed by an annealing at 1600

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8682a9de54cc1cbcbc7b8f0e4c7fa4f8
https://doi.org/10.1063/1.3548362

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Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

Autor: Olivier Palais, Stéphane Morata, Thierry Sauvage, Stéphane Biondo, Laurent Ottaviani, Frank Torregrosa

Publikováno v: Materials Science Forum
Materials Science Forum, 2010, 645-648, pp.717-720. ⟨10.4028/www.scientific.net/MSF.645-648.717⟩
Materials Science Forum, Trans Tech Publications Inc., 2010, 645-648, pp.717-720. ⟨10.4028/www.scientific.net/MSF.645-648.717⟩

International audience; We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feaabf4b43424b59f63595cbb868fd2d
https://hal-amu.archives-ouvertes.fr/hal-03350236

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