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Autor:
Jerome Belledent, Marco Jan-Jaco Wieland, Stéfanie Meunier, B. Icard, Céline Tranquillin, Aurélien Fay, Pieter Brandt, Thiago Figueiro, Matthieu Milléquant, Sébastien Bayle
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 13:031306
For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms o