Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Srivardhan Gowda"'
Autor:
Niccolo Righetti, Chandru Venkatasubramanian, Yifen Liu, Mebrahtu Henok T, Huang Guangyu, Haitao Liu, Xiangyu Yang, Salil Mujumdar, Akira Goda, Hiroyuki Sanda, Andrew Bicksler, Yu Yuwen, Srivardhan Gowda, Elisa Camozzi, Kevin L. Beaman, Tecla Ghilardi, Christian Caillat, Matt Ulrich, Randy J. Koval, Duo Mao
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
The Gate-Induce-Drain-Leakage (GIDL)-assisted body biasing for erase, which is a technique essential to enabling 3DNAND Flash CMOS Under Array architectures, has been extensively studied and successfully optimized to achieve high-performance, reliabl
Publikováno v:
IEEE Transactions On Nanotechnology. 5:258-264
Redox-active molecular monolayers were incorporated in silicon MOSFETs to obtain hybrid silicon/molecular FETs. Cyclic voltammetry and FET characterization techniques were used to study the properties of these hybrid devices. The redox-active molecul
Publikováno v:
IEEE Transactions On Nanotechnology. 4:278-283
Self-assembled monolayers of redox-active molecules were formed on varying thickness of silicon dioxide (SiO/sub 2/). Cyclic voltammetry (CyV) and impedance spectroscopy (capacitance-voltage and conductance-voltage) techniques were used to characteri
Autor:
Qian Zhao, P R Larson, Shyam Surthi, Srivardhan Gowda, Veena Misra, Qiliang Li, Yong Luo, Guru Mathur, M B Johnson
Publikováno v:
Nanotechnology. 16:257-261
Uniform arrays of nano-scale electrolyte-molecule-silicon capacitors have been successfully fabricated. This was done by a combination of reactive ion etch and a selective wet etch through an anodic aluminium oxide mask to form nano-holes in silicon
Autor:
Qian Zhao, Lianhe Yu, Srivardhan Gowda, Shyam Surthi, David F. Bocian, Jonathan S. Lindsey, Qiliang Li, Guru Mathur, Veena Misra
Publikováno v:
Advanced Materials. 16:133-137
Autor:
Srivardhan Gowda, Art B. Reyes, Oliver H. Eagle, Srivatsan Venkatesan, Vikram V. Iyengar, Suresh Chandrasekaran
Publikováno v:
2014 IEEE Workshop On Microelectronics And Electron Devices (WMED).
In this paper, the effect of Shallow Trench Isolation (STI) degradation on program disturb is studied. It is reported that trench isolation is compromised with non-uniformity in trench depth leading to increased boost loss through field isolation lea
Autor:
Tso-Ping Ma, Srivardhan Gowda, Rhett T. Brewer, Chun-Chen Yeh, Chandra Mouli, K. S. Min, Tom Graettinger, Krishna K. Parat, Nirmal Ramaswamy, K. Holtzclaw
Publikováno v:
IEEE Electron Device Letters. 29:778-780
The programming/erasing transient behavior of the NAND-type nanodot flash cell has been studied for the first time. By using an equivalent circuit model, the transient current through each layer in the dielectric stack can be monitored during the pul
Autor:
Thomas M. Graettinger, Arnaud Furnemont, Kirk D. Prall, Haitao Liu, Nirmal Ramaswamy, Srivardhan Gowda, Changhan Kim, Giuseppina Puzzilli, Krishna K. Parat
Publikováno v:
2013 5th IEEE International Memory Workshop.
Intel-Micron have recently introduced a scalable planar NAND cell for the 20nm technology. Replacement of conventional wrap floating gate (FG) NAND memory cell with a High-K/Metal gate planar cell that can scale to the 20nm node and beyond was a sign
Autor:
Qiliang Li, Guru Mathur, Jonathan S. Lindsey, Veena Misra, Thomas A. Sorenson, Kannan Muthukumaran, Robert C. Tenent, Srivardhan Gowda, Shyam Surthi, Qian Zhao
Publikováno v:
Applied Physics Letters. 85:1829-1831
Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to
Autor:
Werner G. Kuhr, David F. Bocian, Robert C. Tenent, Thomas A. Sorenson, Jonathan S. Lindsey, Zhiming Liu, Shyam Surthi, Srivardhan Gowda, Shun-ichi Tamaru, Guru Mathur, Veena Misra, Qiliang Li
Publikováno v:
Applied Physics Letters. 83:198-200
Hybrid silicon capacitors have been successfully fabricated by attaching monolayers of redox-active molecules via self-assembly to ultrathin silicon dioxide layers. Capacitance, conductance, and cyclic voltammetric measurements have been used to char