Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sriramkumar Venugopalan"'
Autor:
Navid Paydavosi, Sriramkumar Venugopalan, Yogesh Singh Chauhan, Juan Pablo Duarte, Srivatsava Jandhyala, Ali M. Niknejad, Chenming Calvin Hu
Publikováno v:
IEEE Access, Vol 1, Pp 201-215 (2013)
Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and
Externí odkaz:
https://doaj.org/article/3781c2c387c8420b8041b079e0b66c5c
Autor:
Thomas Byunghak Cho, Sriramkumar Venugopalan, Yongrong Zuo, Dae Hyun Kwon, Jaehyun Lim, Dongjin Oh, Siddharth Seth, Venumadhav Bhagavatula, Sang Won Son
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:1096-1108
We present a highly configurable, low-power, low-area, low-EVM, SAW-less transmitter (TX) architecture that is based on a dynamically biased power mixer. All FDD/TDD bands from 0.7 to 2.7 GHz for 4G LTE Rel-11 and 3G $\bf{HSPA} + $ are supported in a
Autor:
Yogesh Singh Chauhan, Harshit Agarwal, Christian Enz, Maria-Anna Chalkiadaki, Chenming Hu, Sourabh Khandelwal, M. A. Karim, Sriramkumar Venugopalan, Juan Pablo Duarte, Navid Paydavosi, Ali M. Niknejad
Publikováno v:
IEEE Trans. on Electron Devices
BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry
Publikováno v:
IEEE Transactions on Electron Devices. 60:1480-1484
We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical p
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 32:73-86
With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device varia
Autor:
Srivatsava Jandhyala, Yogesh Singh Chauhan, Ali M. Niknejad, Navid Paydavosi, Chenming Calvin Hu, Sriramkumar Venugopalan, Juan Pablo Duarte
Publikováno v:
IEEE Access. 1:201-215
Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and
Autor:
Darsen D. Lu, M. A. Karim, Ali M. Niknejad, C. Hu, Sriramkumar Venugopalan, Angada B. Sachid, O. Rozeau, Yogesh Singh Chauhan, Bich-Yen Nguyen, O. Faynot, Sourabh Khandelwal
Publikováno v:
IEEE Transactions on Electron Devices. 59:2019-2026
In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computati
Autor:
Yongrong Zuo, Thomas Byunghak Cho, Jaehyun Lim, Dongjin Oh, Sriramkumar Venugopalan, Siddharth Seth, Sang Won Son, Venumadhav Bhagavatula, Dae-Hyun Kwon
Publikováno v:
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
We present a highly-configurable, low-power, low-area, SAW-less TX architecture that is based on a dynamically-biased power mixer. All FDD/TDD bands for 4G LTE and 3G WCDMA/HSPA are supported in addition to 2G quad bands. The power-mixer bias current
Autor:
Yogesh Singh Chauhan, M. A. Karim, Chenming Hu, Angada B. Sachid, Ali M. Niknejad, Bich-Yen Nguyen, O. Faynot, Sriramkumar Venugopalan, Darsen D. Lu
Publikováno v:
IEEE Electron Device Letters. 33:1306-1308
In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of
Autor:
Chenming Hu, Sagnik Dey, Sriramkumar Venugopalan, Samuel Martin, Xin Zhang, Angada B. Sachid, Ali M. Niknejad, Navid Paydavosi
Publikováno v:
ESSDERC
Web of Science
Web of Science
A new model and a theory to capture the effects of halo (pocket) implants on the flicker noise of the advanced-node MOSFETs have been proposed and verified with measurements. The model can accurately capture the bias dependence of the drain-current f