Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Srinivasan Chakravarthi"'
Publikováno v:
Microelectronics Reliability. 47:863-872
CMOS reliability is facing unprecedented challenges due to the continued scaling of device dimensions. To sustain the current scaling trends, it is imperative to understand the fundamental physics of failure mechanisms. Due to the inherent complexity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc04fac7196858663f6bda31ea031fe1
https://doi.org/10.1016/j.microrel.2006.10.008
https://doi.org/10.1016/j.microrel.2006.10.008
Publikováno v:
IEEE Transactions on Electron Devices. 53:944-964
Semiconductor industry has increasingly resorted to strain as a means of realizing the required node-to-node transistor performance improvements. Straining silicon fundamentally changes the mechanical, electrical (band structure and mobility), and ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e539d24992112d9411ad2c59c3f0f3
https://doi.org/10.1109/ted.2006.872912
https://doi.org/10.1109/ted.2006.872912
Publikováno v:
Solid State Phenomena. :425-432
Heavy species such as Sb, In, and Ge are required to meet the challenges of future dopant engineering in planar CMOS technology. An understanding of the interactions of these species with each other and with conventional dopants is urgently required
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c74a9d7fcafe49df378bf7915e1489
https://doi.org/10.4028/www.scientific.net/ssp.108-109.425
https://doi.org/10.4028/www.scientific.net/ssp.108-109.425
Publikováno v:
Journal of Physics: Condensed Matter. 17:S2165-S2170
Using ab initio density functional theory the configuration space of indium clusters in silicon up to size 4 is explored. The strongest binding energy corresponds to a cluster containing one indium and three self-interstitials. Two plausible configur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2c841c028cf2539c3c691425ab6d0c
https://doi.org/10.1088/0953-8984/17/22/003
https://doi.org/10.1088/0953-8984/17/22/003
Autor:
Manoj Mehrotra, Srinivasan Chakravarthi, Sanjay K. Banerjee, H. Bu, Amitabh Jain, P. Kohli, Scott T. Dunham
Publikováno v:
Materials Science and Engineering: B. :390-396
A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80ba5179fec424308ffac9a92735dc8
https://doi.org/10.1016/j.mseb.2004.07.080
https://doi.org/10.1016/j.mseb.2004.07.080
Publikováno v:
Journal of Applied Physics. 89:4758-4765
Ion implantation of silicon introduces excess point defects that quickly recombine during annealing leaving net interstitial and vacancy populations. For higher energy implants, the separation between interstitials and vacancies is larger, leading to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b98aa08dfa7eb06cd68c123bb6d2d4c
https://doi.org/10.1063/1.1352680
https://doi.org/10.1063/1.1352680
Publikováno v:
Journal of Applied Physics. 89:3650-3655
Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron transient enhanced diffusion is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak. The immobile peak is due to clu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab809ea94e9e2c6e540552b8e0a024f
https://doi.org/10.1063/1.1352576
https://doi.org/10.1063/1.1352576
Autor:
Srinivasan Chakravarthi, Vijay Reddy, C. Bowen, Rajesh Khamankar, P.E. Nicollian, Anand T. Krishnan, C. Chancellor
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2246fa1b50db80af9f98a5dfbd46ab
https://doi.org/10.1109/relphy.2007.369892
https://doi.org/10.1109/relphy.2007.369892
Autor:
Ajith Varghese, Anand T. Krishnan, Srikanth Krishnan, Rajesh Khamankar, P.E. Nicollian, C. Chancellor, Srinivasan Chakravarthi, Vijay Reddy
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Negative bias temperature instability (NBTI) is known to exhibit significant recovery upon removal of the gate voltage. The process dependence of this recovery behavior is studied by using the time slope (n) as the monitor. We observe a systematic va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ee4bda42c239b7a7417eccc6bbb718
https://doi.org/10.1109/iedm.2005.1609445
https://doi.org/10.1109/iedm.2005.1609445
Autor:
C. Chancellor, P.E. Nicollian, Rajesh Khamankar, Anand T. Krishnan, Srinivasan Chakravarthi, C. Bowen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We show for the first time that trap generation and breakdown in ultra thin SiON gate dielectrics are triggered by the release of two hydrogen species (H+ and H0) from the anode during TDDB stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::675a7693625e94682a6d57eebfcd20ae
https://doi.org/10.1109/iedm.2005.1609360
https://doi.org/10.1109/iedm.2005.1609360