Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Srinivas V. Pietambaram"'
Autor:
Claudiu V. Falub, Srinivas V. Pietambaram, Oguz Yildirim, Mojmír Meduňa, Ondrej Caha, Rachid Hida, Xue Zhao, Jan Ambrosini, Hartmut Rohrmann, Hans J. Hug
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035243-035243-6 (2019)
We have studied the structural and magnetic properties of enhanced-permeability-dielectric FeCo/Al2O3-multilayer thin films deposited on 8"-Si wafers in an industrial magnetron sputtering system. The EPD-multilayers consist of 25 periods of alternati
Externí odkaz:
https://doaj.org/article/d0b957c74a034aabaed4d98dbc792536
Autor:
G. Steiner, Kenneth H. Smith, Mark F. Deherrera, Gregory W. Grynkewich, Srinivas V. Pietambaram, Jijun Sun, Renu W. Dave, J.M. Slaughter, B. Craigo, Johan Åkerman, Saied N. Tehrani
Publikováno v:
IEEE Transactions on Magnetics. 42:1935-1939
We report the first demonstration of a magnetoresistive random access memory (MRAM) circuit incorporating MgO-based magnetic tunnel junction (MTJ) material for higher performance. We compare our results to those of AlOx-based devices, and we discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e2cec194357cf2b9b0e9f17a7341fc
https://doi.org/10.1109/tmag.2006.877743
https://doi.org/10.1109/tmag.2006.877743
Autor:
Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky
Publikováno v:
IEEE Transactions on Magnetics. 41:132-136
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789b241ceda36f221bc524eaeeae684f
https://doi.org/10.1109/tmag.2004.840847
https://doi.org/10.1109/tmag.2004.840847
Autor:
Brian R. Butcher, Mark F. Deherrera, Johan Åkerman, Jon M. Slaughter, M. Durlam, Gregory W. Grynkewich, Renu W. Dave, J. J. Sun, Srinivas V. Pietambaram, Bradley N. Engel, N. D. Rizzo, Saied N. Tehrani, Jason Allen Janesky, P. Brown, Kenneth H. Smith
Publikováno v:
Scopus-Elsevier
Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37838f923200481aa7ceb84c1fce4c92
https://doi.org/10.1557/mrs2004.234
https://doi.org/10.1557/mrs2004.234
Autor:
Jag Sankar, Srinivas V. Pietambaram, Rajiv K. Singh, Jacques Perriere, Valentin Craciun, D. Kumar
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:198-201
Colossal magnetoresistive La0.7Ca0.3MnO3 (LCMO) films with improved magnetoresistance properties have been grown at relatively low temperatures using an ultraviolet-assisted pulsed laser deposition technique. In this technique, a low pressure Hg lamp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e489c3546244f5e42c2c06f7535f535e
https://doi.org/10.1116/1.1427891
https://doi.org/10.1116/1.1427891
Publikováno v:
Journal of Applied Physics. 86:3317-3326
In this article we report our studies on the microstructure, magnetoresistance (MR) behavior, and magnetic properties of the La1−x−yCaxMnO3 system in thin-film form. By varying the values of x and y in La1−x−yCaxMnO3, we have synthesized an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb6c83733b4231ac9df0a839440bf41
https://doi.org/10.1063/1.371208
https://doi.org/10.1063/1.371208
Autor:
Srinivas V. Pietambaram, Stephen J. Pearton, Dhananjay Kumar, Yoon-Bong Hahn, Hyun Cho, K. P. Lee, K. B. Jung, Rajiv K. Singh, P. H. Hogan, Klaus Hermann Dahmen
Publikováno v:
Journal of The Electrochemical Society. 146:2748-2751
Effective pattern transfer into PrBaCaMnO 3 and LaSrMnO 3 has been achieved using Cl 2 /Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 A min -1 for LaSrMnO 3 and 300 A min -1 for PrBaCaMnO 3 were obtained, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17630bd6c7c6905a1a5b979a3dce093f
https://doi.org/10.1149/1.1392004
https://doi.org/10.1149/1.1392004
Publikováno v:
Physical Review B. 58:8182-8185
A systematic investigation focused on the magnetoresistance (MR) behavior of ${\mathrm{La}}_{0.7}{\mathrm{Ca}}_{x}{\mathrm{MnO}}_{3}$ ($x=0,$ 0.2, and 0.3) thin films has been carried out. As indicated by the unit chemical formula, ${\mathrm{La}}_{0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a87c69e4bce6e02bf5f0a6897f4391d
https://doi.org/10.1103/physrevb.58.8182
https://doi.org/10.1103/physrevb.58.8182
Autor:
Renu W. Dave, J.M. Slaughter, Jijun Sun, Srinivas V. Pietambaram, Jason Allen Janesky, G. Steiner
Publikováno v:
IEEE Transactions on Magnetics. 40:2619-2621
Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6d1055dc5b8c284a55176a172c1a9e
https://doi.org/10.1109/tmag.2004.834209
https://doi.org/10.1109/tmag.2004.834209
Autor:
Soma Chattopadhyay, Dhananjay Kumar, Alexander Kvit, Srinivas V. Pietambaram, A. K. Sharma, Jagdish Narayan, Rajiv K. Singh, Jag Sankar, C. B. Lee, Walter M. Gilmore
Publikováno v:
Applied Physics Letters. 78:1098-1100
We report an epitaxial growth of LCMO (La2/3Ca1/3MnO3) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO3 films were used as intermediate layers between LCMO and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd96a68e4d80a108b61a35e987daa961
https://doi.org/10.1063/1.1350603
https://doi.org/10.1063/1.1350603