Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Srinivas D. Nemani"'
Autor:
James Huang, Yunil Cho, Zichen Zhang, Antony Jan, Keith T. Wong, Srinivas D. Nemani, Ellie Yieh, Andrew C. Kummel
Publikováno v:
ACS Applied Materials & Interfaces. 14:15716-15727
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec57f207fe548106a3c563f87e28ebe3
https://doi.org/10.1021/acsami.1c19810
https://doi.org/10.1021/acsami.1c19810
Autor:
Mansour Moinpour, Jacob Spiegelman, Michael Breeden, Charles H. Winter, Victor Wang, Ravindra K. Kanjolia, Srinivas D. Nemani, Jacob Woodruff, Steven Wolf, Andrew C. Kummel, Ashay Anurag, Daniel Moser, Keith Tatseun Wong
Publikováno v:
ACS Applied Nano Materials. 4:8447-8454
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6379f6f2e79620f409d4246ee7e47345
https://doi.org/10.1021/acsanm.1c01639
https://doi.org/10.1021/acsanm.1c01639
Autor:
James, Huang, Yunil, Cho, Zichen, Zhang, Antony, Jan, Keith T, Wong, Srinivas D, Nemani, Ellie, Yieh, Andrew C, Kummel
Publikováno v:
ACS applied materialsinterfaces. 14(13)
Highly selective and smooth TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::30858c7d6215690f0885122bddab5b9b
https://pubmed.ncbi.nlm.nih.gov/35316031
https://pubmed.ncbi.nlm.nih.gov/35316031
Autor:
Russell J. Holmes, Kasra Sardashti, Srinivas D. Nemani, Jun Hong Park, Steven Wolf, Daniel Alvarez, Naomi Yoshida, Mary Edmonds, Ellie Yieh, Andrew C. Kummel, Lin Dong, Max Clemons
Publikováno v:
Applied Surface Science. 439:689-696
Low-temperature sequential exposures of N2H4 and BCl3 have been performed on Si0.3Ge0.7(001), Cu, and HOPG surfaces at 350 °C. A novel BN ALD process has been achieved on Si0.3Ge0.7(001) with 60 cycles of BN ALD producing a uniform, pinhole-free thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472ac10e9086fd8c1da385b1a3c7a5a9
https://doi.org/10.1016/j.apsusc.2018.01.038
https://doi.org/10.1016/j.apsusc.2018.01.038
Autor:
Nam-Sung Kim, Jong Choi, Andrew C. Kummel, Raymond Hung, Srinivas D. Nemani, Christopher F. Ahles
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
An in-situ dry clean which removes native SiO x and flowable oxide but does not etch the underlying silicon, thermal SiO 2 or SiN x , is reported. This process utilized a remote NF 3 /NH 3 /Ar plasma, and the selectivity was studied as a function of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d75e76da130175f7c16eafb91bac800a
https://doi.org/10.1109/vlsi-tsa.2019.8804691
https://doi.org/10.1109/vlsi-tsa.2019.8804691
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
A selective atomic layer deposition of TiO 2 on Si and SiO 2 in preference to SiCOH has been developed. This process utilizes Ti(OiPr) 4 and acetic acid (AcOH) as the co-reactants and deposits TiO 2 on Si and SiO 2 but not on SiCOH. It is found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3bb0edcce69a228ec3874fa0bd2382
https://doi.org/10.1109/vlsi-tsa.2019.8804682
https://doi.org/10.1109/vlsi-tsa.2019.8804682
Autor:
Andrew C. Kummel, Jong Youn Choi, Keith Tatseun Wong, Srinivas D. Nemani, Ellie Yieh, Christopher F. Ahles
Publikováno v:
Applied Surface Science. 512:144307
A resistive MoSiOx film was deposited with high selectivity on Si in preference to SiO2 and SiN using MoF6, Si2H6 and O2 as reactants. Two different approaches were demonstrated via thermal atomic layer deposition (ALD). First, ALD of MoSiOx by seque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b6d57b74bfa09b49aa47c82412c354
https://doi.org/10.1016/j.apsusc.2019.144307
https://doi.org/10.1016/j.apsusc.2019.144307
Autor:
Srinivas D. Nemani, Ellie Yieh, Andrew C. Kummel, Jong Youn Choi, Keith Tatseun Wong, Yunil Cho, Ashay Anurag, Christopher F. Ahles
Publikováno v:
Applied Surface Science. 512:145733
HfOx was selectively deposited on Si in preference to SiCOH using an oxygen-containing precursor, Hf(OtBu)4, via a pulsed chemical vapor deposition. The water-free process avoids nucleation by water on passivated oxide surfaces. The uniform HfOx film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a173fe0ef1f1ffdefe80b7ea8a92d077
https://doi.org/10.1016/j.apsusc.2020.145733
https://doi.org/10.1016/j.apsusc.2020.145733
Autor:
Laurent Vallier, Jeremiah T. Pender, Nicolas Posseme, C. Mannequin, Olivier Joubert, Sergey G. Belostotskiy, Srinivas D. Nemani, S. Banola, Christophe Licitra, Chia-Ling Kao, Camille Petit-Etienne, Patrice Gonon
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
Today porous SiOCH combined with metallic hard masking strategy is an integration of choice for advanced BEOL interconnect technology node. However in this context the main integration issue is the dielectric film sensitivity to fluorocarbon (FC) etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1ba81425219a1b1a62eb6628e86937
https://doi.org/10.1109/iitc.2013.6615591
https://doi.org/10.1109/iitc.2013.6615591