Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Srinivas B. Bollepalli"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2311-2315
This article describes the result of predictions based on a novel continuum model for the effect of microstructure on deprotection reaction kinetics during postexposure bake (PEB). The effect of neighboring blocking groups is incorporated in a contin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c5403943e4985133ae04115e840248
https://doi.org/10.1116/1.2998700
https://doi.org/10.1116/1.2998700
Publikováno v:
Microelectronic Engineering. 53:13-20
We report the results of a modeling study of the image formation process in EUVL. Using a rigorous diffraction scheme, we compute the propagation of the mask image in the multilayer stack. The same approach is used to compute the aberrations induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4a4c29f3a15be0044b0eaedd5e41e4
https://doi.org/10.1016/s0167-9317(00)00260-4
https://doi.org/10.1016/s0167-9317(00)00260-4
Autor:
Franco Cerrina, Srinivas B. Bollepalli
Publikováno v:
Microelectronic Engineering. 46:443-447
The reflective mask used in Extreme Ultraviolet Lithography is based on a multilayer stack reflector, over-coated with a suitable absorber. We show that in order to predict correctly the reflected field it is necessary to describe in detail the diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadb8e62be076f2b0a24312798a3a6a4
https://doi.org/10.1016/s0167-9317(99)00032-5
https://doi.org/10.1016/s0167-9317(99)00032-5
Publikováno v:
Microelectronic Engineering. :271-274
Previous experimental studies of proximity x-ray lithography for complex patterning at 75–125 nm linewidths have indicated that image shortening is significant at > 10 μm gaps [1,2]. Simple serifs added to line ends have been shown to reduce line-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a960c75e2d7c65c96e3262cd6330d49
https://doi.org/10.1016/s0167-9317(98)00062-8
https://doi.org/10.1016/s0167-9317(98)00062-8
Autor:
Stephan Wagner, Vivek K. Singh, Yan Borodovsky, Kenny Kal Vin Toh, Bin Hu, Srinivas B. Bollepalli
Publikováno v:
Optical Microlithography XXI.
In June 2007, Intel announced a new pixelated mask technology. This technology was created to address the problem caused by the growing gap between the lithography wavelength and the feature sizes patterned with it. As this gap has increased, the qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::222f3e774cc70fc093ad25bb02f37705
https://doi.org/10.1117/12.773248
https://doi.org/10.1117/12.773248
Autor:
Paul Davids, Srinivas B. Bollepalli
Publikováno v:
Optical Microlithography XXI.
In this paper, we will outline general mathematical techniques applied to the solution of the inverse problem for partially coherent lithographic imaging. The forward imaging problem is reviewed and its solution is discussed within the framework of 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac177a0c05049d84b19ae9d6020617f5
https://doi.org/10.1117/12.772040
https://doi.org/10.1117/12.772040
Autor:
Richard E. Schenker, Bin Hu, Yan Borodovsky, Vivek K. Singh, Kenny Kal Vin Toh, Karmen Yung, Wen-Hao Cheng, Srinivas B. Bollepalli
Publikováno v:
Optical Microlithography XXI.
This work describes the advantages, tolerances and integration issues of using Pixelated Phase Masks for patterning logic interconnect layers. Pixelated Phase Masks (PPMs) can act as variable high-transmission attenuated phase shift masks where the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da9d2b831b4fc8ec64aaa387fd743b04
https://doi.org/10.1117/12.771677
https://doi.org/10.1117/12.771677
Autor:
Wenlong Jiang, Olga Vladimirsky, James W. Taylor, Klaus Simon, Srinivas B. Bollepalli, Q. Leonard, Yuli Vladimirsky, Niru V. Dandekar
Publikováno v:
SPIE Proceedings.
This paper analyzes and demonstrates the possibility of producing lithographic images at or below the 'diffraction limit' for synchrotron radiation-based x-ray proximity lithography. It is shown that at reasonable mask/wafer gaps of 15-30 micrometers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d9ecc628b2634bb486496da11df939e
https://doi.org/10.1117/12.351161
https://doi.org/10.1117/12.351161
Autor:
L. Rathbun, Yuli Vladimirsky, Olga Vladimirsky, Q. Leonard, Lei Yang, James W. Taylor, Srinivas B. Bollepalli, Richard C. Tiberio, Jaz Bansel, Mumit Khan, Franco Cerrina, Klaus Simon
Publikováno v:
SPIE Proceedings.
Availability of production-worthy x-ray masks is of great concern to the lithographic community in anticipation of insertion of x-ray lithography as the leading contender among the next generation lithographies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8289491f50e34e4ef03a3a8fb8a83cb6
https://doi.org/10.1117/12.351147
https://doi.org/10.1117/12.351147
Publikováno v:
SPIE Proceedings.
It is well known that a point source produces a small magnification of the mask pattern on the wafer due to divergence; the effect becomes especially noticeable at the corners and edges of the field. In this article we model the image formation due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7e14a973f048f58215d29021bb57e74
https://doi.org/10.1117/12.309569
https://doi.org/10.1117/12.309569