Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Srikrishna Chanakya, Bodepudi"'
Autor:
Yance Chen, Yue Dai, Srikrishna Chanakya Bodepudi, Xinyu Liu, Yuan Ma, Shiyu Xing, Dawei Di, Feng Tian, Xin Ming, Yingjun Liu, Kai Pang, Fei Xue, Yunyan Zhang, Zexin Yu, Yaping Dan, Oleksiy V. Penkov, Yishu Zhang, Dianyu Qi, Wenzhang Fang, Yang Xu, Chao Gao
Publikováno v:
InfoMat, Vol 6, Iss 9, Pp n/a-n/a (2024)
Abstract The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, c
Externí odkaz:
https://doaj.org/article/79722a9ead564190b74b7e1300dffaee
Autor:
Xiaoxue Cao, Jiahao Lin, Shaoxiong Wu, Srikrishna Chanakya Bodepudi, Zongwen Li, Feng Tian, Zheng Li, Xinyu Liu, Li Peng, Chao Gao, Yang Xu
Publikováno v:
IEEE Access, Vol 11, Pp 102562-102571 (2023)
Patterning is a crucial fabrication step for successfully applying two-dimensional materials in electronic and optoelectronic devices. It can realize miniaturization and help explore new physical phenomena of 2D materials. However, the manufacturing
Externí odkaz:
https://doaj.org/article/85fb3b1416324ba09a95e3f96d743a5d
Autor:
Munir Ali, Afshan Khaliq, Muhammad Abid Anwar, Jianhang Lv, Muhammad Malik, Tian Feng, Srikrishna Chanakya Bodepudi, Hongwei Guo, Khurram Shehzad, Zongwen Li, Yunfan Dong, Wei Liu, Huan Hu, Yuda Zhao, Bin Yu, Yang Xu
Publikováno v:
IEEE Access, Vol 11, Pp 37424-37436 (2023)
This work presents an in-situ readout of the transient photoresponse of a graphene-oxide-semiconductor heterostructure by utilizing graphene’s field-effect coupling with the silicon photogate. The reported device which acts as a graphene charge-cou
Externí odkaz:
https://doaj.org/article/84f88014eeaa4edbb91b1f35c6e600eb
Autor:
Chenhao Wang, Xinyi Xu, Xiaodong Pi, Mark D. Butala, Wen Huang, Lei Yin, Wenbing Peng, Munir Ali, Srikrishna Chanakya Bodepudi, Xvsheng Qiao, Yang Xu, Wei Sun, Deren Yang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Silicon is an abundant element on earth and is perfectly compatible with the well-established CMOS processing industry. Here, Sun et al. demonstrate multifunctional neuromorphic devices based on silicon nanosheet stacks, bringing silicon back as a po
Externí odkaz:
https://doaj.org/article/10c8558a16ff41d9a21c951d070ae47d
Autor:
Muhammad Abid Anwar, Munir Ali, Dong Pu, Srikrishna Chanakya Bodepudi, Jianhang Lv, Khurram Shehzad, Xiaochen Wang, Ali Imran, Yuda Zhao, Shurong Dong, Huan Hu, Bin Yu, Yang Xu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 970-975 (2022)
Two-dimensional materials have modernized a broad interest in electronic devices. Along with many advantages, their atomic-level thickness makes them sensitive under high electrical stress. This work proposes a protection design using a Graphene/Sili
Externí odkaz:
https://doaj.org/article/72a6d2c1be7949fab5d54697afaa0c76
Autor:
Li Peng, Lixiang Liu, Sichao Du, Srikrishna Chanakya Bodepudi, Lingfei Li, Wei Liu, Runchen Lai, Xiaoxue Cao, Wenzhang Fang, Yingjun Liu, Xinyu Liu, Jianhang Lv, Muhammad Abid, Junxue Liu, Shengye Jin, Kaifeng Wu, Miao‐Ling Lin, Xin Cong, Ping‐Heng Tan, Haiming Zhu, Qihua Xiong, Xiaomu Wang, Weida Hu, Xiangfeng Duan, Bin Yu, Zhen Xu, Yang Xu, Chao Gao
Publikováno v:
InfoMat, Vol 4, Iss 6, Pp n/a-n/a (2022)
Abstract Graphene with linear energy dispersion and weak electron–phonon interaction is highly anticipated to harvest hot electrons in a broad wavelength range. However, the limited absorption and serious backscattering of hot‐electrons result in
Externí odkaz:
https://doaj.org/article/ca083c51e7ff4554ba67f9b43fd2ce46
Autor:
Bo Fang, Srikrishna Chanakya Bodepudi, Feng Tian, Xinyu Liu, Dan Chang, Sichao Du, Jianhang Lv, Jie Zhong, Haiming Zhu, Huan Hu, Yang Xu, Zhen Xu, Weiwei Gao, Chao Gao
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Here, the authors design macroscopic multi-layered graphene fibres with light-emission and -detection dual functionality in the mid-infrared range, offering megahertz modulation frequencies and bidirectional data transmission operation.
Externí odkaz:
https://doaj.org/article/c117d27e06e24c64ac96fcf64887ca58
Autor:
Munir Ali, Yunfan Dong, Jianhang Lv, Hongwei Guo, Muhammad Abid Anwar, Feng Tian, Khurram Shahzad, Wei Liu, Bin Yu, Srikrishna Chanakya Bodepudi, Yang Xu
Publikováno v:
Sensors, Vol 22, Iss 23, p 9341 (2022)
Charge-coupled devices (CCD) allow imaging by photodetection, charge integration, and serial transfer of the stored charge packets from multiple pixels to the readout node. The functionality of CCD can be extended to the non-destructive and in-situ r
Externí odkaz:
https://doaj.org/article/fb9b67f6897a459cb8cc12bc0d99bf03
Autor:
Munir Ali, Muhammad Abid Anwar, Jianhang Lv, Srikrishna Chanakya Bodepudi, Hongwei Guo, Khurram Shehzad, Yunfan Dong, Wei Liu, Xiaochen Wang, Ali Imran, Huan Hu, Yuda Zhao, Bin Yu, Yang Xu
Publikováno v:
IEEE Transactions on Electron Devices. 70:2370-2377
Autor:
Yunfan Dong, Jianhang Lv, Jian Chai, Feng Tian, Xiaoxue Cao, Xinyu Liu, Li Chen, Srikrishna Chanakya Bodepudi, Yuda Zhao, Yang Xu, Bin Yu
Publikováno v:
IEEE Transactions on Electron Devices. 69:6884-6889