Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Srikar Jandhyala"'
Autor:
Jiyoung Kim, Greg Mordi, Angelica Azcatl, Rafik Addou, Robert M. Wallace, Luigi Colombo, Jie Huang, Srikar Jandhyala, Antonio T. Lucero, Lanxia Cheng
Publikováno v:
ACS Applied Materials & Interfaces. 8:5002-5008
Despite the number of existing studies that showcase the promising application of fluorinated graphene in nanoelectronics, the impact of the fluorine bonding nature on the relevant electrical behaviors of graphene devices, especially at low fluorine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77ef342e3993067b2f80bc58d5f565b7
https://doi.org/10.1021/acsami.5b11701
https://doi.org/10.1021/acsami.5b11701
Autor:
Robert M. Wallace, Bruce E. Gnade, Sangchul Lee, Omokhodion David Iyore, Greg Mordi, Manuel Quevedo-Lopez, Saungeun Park, Young Gon Lee, Chang Goo Kang, Byoung Hun Lee, Jiyoung Kim, Srikar Jandhyala, Yonghun Kim
Publikováno v:
Carbon. 68:791-797
The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35db0d566ff0481f39deee61e84251c
https://doi.org/10.1016/j.carbon.2013.11.071
https://doi.org/10.1016/j.carbon.2013.11.071
Autor:
Jin-Hyun Kim, Srikar Jandhyala
Publikováno v:
Thin Solid Films. 546:85-93
Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50453e2faaeef7d23d8c3420ce8b764
https://doi.org/10.1016/j.tsf.2013.03.078
https://doi.org/10.1016/j.tsf.2013.03.078
Autor:
Greg Mordi, David Hinojos, Srikar Jandhyala, Yufeng Hao, Cheng Gong, Robert M. Wallace, Xiaoye Qin, Rodney S. Ruoff, Kyeongjae Cho, Yves J. Chabal, Moon J. Kim, Jiyoung Kim, Luigi Colombo, Herman C. Floresca, Stephen McDonnell
Publikováno v:
The Journal of Physical Chemistry C. 117:23000-23008
During chemical-vapor-deposited graphene transfer onto target substrates, a polymer film coating is necessary to provide a mechanical support. However, the remaining polymer residues after organic solvent rinsing cannot be effectively removed by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c86173f3fe7800b11f6bae7012241ae
https://doi.org/10.1021/jp408429v
https://doi.org/10.1021/jp408429v
Publikováno v:
ECS Transactions. 45:39-46
One of the major advancements in the field of nanoelectronics in the last decade was the successful isolation of graphene [1], which led to the proposal of many novel electronic and photonic devices [2-4]. Graphene, a single sheet of carbon atoms pac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e4c4c1c5557757a52d378d5dcdd978e
https://doi.org/10.1149/1.3700451
https://doi.org/10.1149/1.3700451
Autor:
Jinho Ahn, Luigi Colombo, Moon J. Kim, Carlo Floresca, Yves J. Chabal, Kyeongjae Cho, Pil-Ryung Cha, Jiyoung Kim, Greg Mordi, Geunsik Lee, Bong-Ki Lee, Robert M. Wallace, Srikar Jandhyala
Publikováno v:
ACS Nano. 6:2722-2730
Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1617441b8595086da54b48cd5af91966
https://doi.org/10.1021/nn300167t
https://doi.org/10.1021/nn300167t
Autor:
Greg Mordi, Srikar Jandhyala, Sangchul Lee, Robert M. Wallace, Jang-Sik Lee, Jiyoung Kim, Saungeun Park, Luigi Colombo, Byoung Hun Lee, Min-Woo Ha
Publikováno v:
IEEE Electron Device Letters. 35:277-279
We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 V/μs) by v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5c76b98da88331abda40026600727c
https://doi.org/10.1109/led.2013.2294828
https://doi.org/10.1109/led.2013.2294828
Autor:
David McNeill, B. E. Coss, Durga Gajula, Srikar Jandhyala, Robert M. Wallace, B. M. Armstrong, Jin-Hyun Kim, Hong Dong
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
Germanium is of unique interest for CMOS technology because of its high electron and hole mobilities compared with those of its counterpart silicon [1]. Significant progress has been in germanium p-MOSFETs, while in n-MOSFETS there are some hindrance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f2c676958dc9d2fde47a7c58d38490
https://doi.org/10.1109/isdrs.2011.6135277
https://doi.org/10.1109/isdrs.2011.6135277
Publikováno v:
2011 IEEE Nanotechnology Materials and Devices Conference.
In this article we demonstrate the use of an ozone based functionalization scheme of graphene surface for depositing thin, high-k dielectrics using atomic-layer deposition (ALD) technique. It is found that the ozone functionalization at room temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360b70df9c62313005c3168977406e3f
https://doi.org/10.1109/nmdc.2011.6155319
https://doi.org/10.1109/nmdc.2011.6155319
Publikováno v:
10th IEEE International Conference on Nanotechnology.
The initial growth mechanism of Al 2 0 3 films deposited by atomic layer deposition (ALD) using trimethylaluminum (TMA) and ozone as a precursor and an oxidant, respectively, on Highly Ordered Pyrolytic graphite (HOPG) has been investigated. Trimethy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a28e8c7b64799b2988e3a44e829735d
https://doi.org/10.1109/nano.2010.5697781
https://doi.org/10.1109/nano.2010.5697781