Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Srikanth Kommu"'
Autor:
Zhiqiang Fan, Zhimin Zhu, Tim Limmer, Srikanth Kommu, Xianggui (Shawn) Ye, Joyce Lowes, Richard Daugherty, James Lamb
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Silicon hardmask (Si-HM) materials used in lithography processes play a critical role in transferring patterns to desired substrates. In addition, these materials allow for the tuning of optical properties such as reflectivity and optical distributio
Publikováno v:
ECS Transactions. 16:261-266
This work is focussed on the modeling and simulation of structural deformation of silicon wafers during their initial heat-up in a CVD reactor chamber, prior to the chemical vapor deposition process. The wafer structural deformation can lead to some
Publikováno v:
Chemical Engineering Science. 59:345-358
To accurately predict aerosol dynamics in various systems, it is imperative to combine the governing equations for transport of momentum, mass and energy as well as reaction kinetics with an accurate procedure for solving the general dynamic equation
Publikováno v:
Chemical Engineering Science. 59:359-371
A highly computationally efficient and accurate semi-implicit numerical technique based on the concept of operator splitting (described in detail in Part I of this paper) has been used to solve the General Dynamic Equation in complex, non-isothermal
Autor:
Bamin Khomami, Srikanth Kommu
Publikováno v:
Industrial & Engineering Chemistry Research. 41:732-743
A detailed three-dimensional simulation model has been used to explore new designs and operating conditions that will lead to high-volume production of single-crystal silicon wafers in horizontal single-wafer reactors. As the SiHCl3−H2 system is a
Publikováno v:
Polymer Composites. 19:335-346
Injected pultrusion (IP) is an attractive process for high volume, high performance, and low cost manufacture of continuous fiber reinforced polymer matrix composites. In this work we focus our attention on development of a computer simulation model
Publikováno v:
ECS Meeting Abstracts. :2003-2003
not Available.
Autor:
John A. Pitney, Srikanth Kommu
Publikováno v:
ECS Meeting Abstracts. :1983-1983
not Available.
Publikováno v:
Journal of The Electrochemical Society. 147:1538
The main goal of this study is to examine the possibility of using detailed three-dimensional simulations of transport of momentum, energy, and mass in horizontal single-wafer epitaxial silicon reactors in conjunction with relatively simple kinetic m