Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sri Samavedam"'
Autor:
Seong-Yeol Mun, Shesh Mani Pandey, Xusheng Wu, Manfred Eller, Sri Samavedam, Sanjay Parihar, David Burnett
Publikováno v:
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
The basic multi-gate Vt variation model for uniform doping is extended to support a 2-region fin doping methodology that provides good agreement with Vt mismatch measurements as well as useful insights into how the non-uniform fin doping impacts the
Autor:
Carolyn F. H. Gondran, David Gilmer, Sadao Sasaki, Kimberly G. Reid, Sri Samavedam, Dina H. Triyoso, Anthony Dip
Publikováno v:
Thin Solid Films. 517:2712-2718
In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO 2 that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO 2 using sequential exposures of trimethyl-aluminum and ammonia (NH 3 ) in a batch v
Autor:
E. Luckowski, J. Schaeffer, Christopher C. Hobbs, L. R. C. Fonseca, Zhi-Xiong Jiang, Bich-Yen Nguyen, David C. Gilmer, D. Roan, O. Adetutu, Rich Gregory, Phil Tobin, Bruce E. White, Yong Liang, Sri Samavedam, C. Capasso, K. Moore
Publikováno v:
MRS Proceedings. 811
As traditional poly-silicon gated MOSFET devices scale, the additional series capacitance due to poly-silicon depletion becomes an increasingly large fraction of the total gate capacitance, excessive boron penetration causes threshold voltage shifts,
Autor:
Dina H. Triyoso, David C. Gilmer, Rama I. Hegde, Rich Gregory, J. Schaeffer, Mark Raymond, Sri Samavedam, Bill Taylor, Jack Jiang
Publikováno v:
ECS Meeting Abstracts. :1920-1920
Dielectric capping layer and electrode alloying approaches for tuning the effective work function and effective oxide thickness of metal oxide semiconductor transistors are compared. TaMgC and MoAlN electrodes are compared to MgO and Al2O3 capping la