Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sreenivas Jayaraman"'
Autor:
John R. Abelson, Sreenivas Jayaraman, Gregory S. Girolami, Yu Yang, Kinsey L. Canova, Do Young Kim
Publikováno v:
Journal of Vacuum Science & Technology A. 39:043409
We describe a convenient and broadly applicable method that affords the superconformal growth of films in trenches and other recessed features by chemical vapor deposition, here applied to the growth of the metal diborides CrB2 and HfB2. A flux of at
Autor:
Do Young Kim, Yu Yang, John R. Abelson, Sreenivas Jayaraman, Gregory S. Girolami, Brent A. Sperling
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:200-206
In situ spectroscopic ellipsometry was used to analyze hafnium diboride thin films deposited by chemical vapor deposition from the single-source precursor Hf(BH4)4. By modeling the film optical constants with a Drude-Lorentz model, the film thickness
Autor:
Navneet Kumar, J. E. Gerbi, John R. Abelson, Andreas A. Polycarpou, Sreenivas Jayaraman, J. P. Chevalier, Abhishek Chatterjee, Pascal Bellon
Publikováno v:
Surface and Coatings Technology. 201:4317-4322
Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they are excellent candidates for a wide range of tribological applications. In this work, stoi
Publikováno v:
Journal of Crystal Growth. 294:389-395
The texture evolution of hafnium diboride (HfB 2 ) thin films grown by chemical vapor deposition from the single source precursor Hf(BH 4 ) 4 was studied. Films grown on amorphous substrates show a (0 0 0 1) orientation at growth temperatures ⩽700
Autor:
John R. Abelson, Sreenivas Jayaraman, J. E. Gerbi, Gregory S. Girolami, Do Young Kim, Pascal Bellon, Yu Yang, J. P. Chevalier, Abhishek Chatterjee
Publikováno v:
Surface and Coatings Technology. 200:6629-6633
Hard, dense and conformal hafnium diboride (HfB2) thin films were obtained by CVD from the precursor Hf[BH4]4 at deposition temperatures ≤350 °C. As-deposited films were X-ray amorphous but transformed to a nanocrystalline structure after being an
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1619-1625
High quality, stoichiometric thin films of hafnium diboride are deposited by chemical vapor deposition from the precursor Hf[BH4]4 at deposition temperatures as low as 200°C. An activation energy of 0.43eV(41kJ∕mol) is obtained for the overall pro
Autor:
Emily J. Klein, Do Young Kim, Gregory S. Girolami, John R. Abelson, Yu Yang, Sreenivas Jayaraman
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:631-633
Thin films of chromium diboride, a “metallic ceramic” material with a melting point of 2200°C, were deposited by chemical vapor deposition using a single-source precursor, the bis(octahydrotriborato)chromium(II) complex Cr(B3H8)2 at substrate te
Publikováno v:
Microscopy and Microanalysis. 10:802-803
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Publikováno v:
Applied Physics Letters. 87:241915
We use fluctuation electron microscopy to determine changes in the medium-range structural order of un-hydrogenated amorphous silicon thin films after they are exposed to atomic hydrogen at a substrate temperature of 230 °C. The films are deposited