Zobrazeno 1 - 10
of 153
pro vyhledávání: '"Srabanti, Chowdhury"'
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-4 (2024)
Externí odkaz:
https://doaj.org/article/30d4cc88703b49f39c6f317930c9369c
Autor:
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen Boyd, Srabanti Chowdhury
Publikováno v:
IEEE Access, Vol 12, Pp 123224-123235 (2024)
In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of param
Externí odkaz:
https://doaj.org/article/0dcf7a2591e947b6bcf6640c37b61d9e
Autor:
Kwang Jae Lee, Xinyi Wen, Yusuke Nakazato, Jaeyi Chun, Maliha Noshin, Chuanzhe Meng, Srabanti Chowdhury
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
Embedding p-type gallium nitride (p-GaN) in AlxGa1-xN-based thin films has garnered significant interest as a versatile structure for bandgap engineering such as tunnel/super-junctions or current blocking/guiding functions in electronic devices. Howe
Externí odkaz:
https://doaj.org/article/ad6b0a812fda4f18af3e748be1d9a132
Autor:
Kelly Woo, Zhengliang Bian, Maliha Noshin, Rafael Perez Martinez, Mohamadali Malakoutian, Bhawani Shankar, Srabanti Chowdhury
Publikováno v:
JPhys Materials, Vol 7, Iss 2, p 022003 (2024)
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material c
Externí odkaz:
https://doaj.org/article/3766fe074b8c43de93e0cef1dab58df8
Publikováno v:
Crystals, Vol 13, Iss 4, p 709 (2023)
We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CA
Externí odkaz:
https://doaj.org/article/27ec61e838044cf6bcbb6254a92912ab
Autor:
Dong Ji, Srabanti Chowdhury
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes are of emerging interest to the device community. The review covers various important aspects of the device such as the design space, substrate choice, edge termination
Externí odkaz:
https://doaj.org/article/dc65c6c1d39a4dd58dc2ccfe89958963
Autor:
Dong Ji, Ke Zeng, Zhengliang Bian, Bhawani Shankar, Brendan P. Gunning, Andrew Binder, Jeramy R. Dickerson, Ozgur Aktas, Travis J. Anderson, Robert J. Kaplar, Srabanti Chowdhury
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 030703-030703-8 (2022)
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the
Externí odkaz:
https://doaj.org/article/f3c09ca633544dbf89883e18c18fcb93
Publikováno v:
IEEE Transactions on Electron Devices. 70:2247-2254
Publikováno v:
IEEE Electron Device Letters. 44:841-844
Autor:
Xinyu Zhou, Mohamadali Malakoutian, Rohith Soman, Zhengliang Bian, Rafael Perez Martinez, Srabanti Chowdhury
Publikováno v:
IEEE Transactions on Electron Devices. 69:6650-6655